公开(公告)号：US20090294101A1

公开(公告)日：2009-12-03

申请号：US12132101

申请日：2008-06-03

申请人： RICHARD FOVELL ,  Paul Brillhart ,  Sang In Yi ,  Anisul H. Khan ,  Jivko Dinev ,  Shane Nevil

发明人： RICHARD FOVELL ,  Paul Brillhart ,  Sang In Yi ,  Anisul H. Khan ,  Jivko Dinev ,  Shane Nevil

IPC分类号： F28D15/00

CPC分类号： F28D15/00 ,  F28D2021/0077 ,  H01L21/67109 ,  H01L21/67248

摘要： Methods and apparatus for controlling the temperature of a substrate support are provided herein. In some embodiments, an apparatus for controlling the temperature of a substrate support may include a first heat transfer loop and a second heat transfer loop. The first heat transfer loop may have a first bath with a first heat transfer fluid at a first temperature. The second heat transfer loop may have a second bath with a second heat transfer fluid at a second temperature. The first and second temperatures may be the same or different. First and second flow controllers may be provided for respectively providing the first and second heat transfer fluids to a substrate support. One or more return lines may couple one or more outlets of the substrate support to the first and second baths for returning the first and second heat transfer fluids to the first and second baths.

摘要翻译： 本文提供了用于控制基板支撑件的温度的方法和装置。 在一些实施例中，用于控制衬底支撑件的温度的装置可以包括第一传热回路和第二传热回路。 第一传热回路可以具有在第一温度下具有第一传热流体的第一浴。 第二传热回路可以具有在第二温度下具有第二传热流体的第二浴。 第一和第二温度可以相同或不同。 可以提供第一和第二流量控制器以分别将第一和第二传热流体提供给基板支撑件。 一个或多个返回线可以将衬底支撑件的一个或多个出口连接到第一和第二浴，以将第一和第二传热流体返回到第一和第二浴。

公开(公告)号：US08596336B2

公开(公告)日：2013-12-03

申请号：US12132101

申请日：2008-06-03

申请人： Richard Fovell ,  Paul Brillhart ,  Sang In Yi ,  Anisul H. Khan ,  Jivko Dinev ,  Shane Nevil

发明人： Richard Fovell ,  Paul Brillhart ,  Sang In Yi ,  Anisul H. Khan ,  Jivko Dinev ,  Shane Nevil

IPC分类号： F22B37/00 ,  G05D9/00 ,  B05C11/00

CPC分类号： F28D15/00 ,  F28D2021/0077 ,  H01L21/67109 ,  H01L21/67248

摘要： Apparatus for controlling the temperature of a substrate support may include a first heat transfer loop and a second heat transfer loop. The first heat transfer loop may have a first bath with a first heat transfer fluid at a first temperature. The second heat transfer loop may have a second bath with a second heat transfer fluid at a second temperature. The first and second temperatures may be the same or different. First and second flow controllers may be provided for respectively providing the first and second heat transfer fluids to a substrate support. One or more return lines may couple one or more outlets of the substrate support to the first and second baths for returning the first and second heat transfer fluids to the first and second baths.

摘要翻译： 用于控制衬底支撑件的温度的装置可以包括第一传热回路和第二传热回路。 第一传热回路可以具有在第一温度下具有第一传热流体的第一浴。 第二传热回路可以具有在第二温度下具有第二传热流体的第二浴。 第一和第二温度可以相同或不同。 可以提供第一和第二流量控制器以分别将第一和第二传热流体提供给基板支撑件。 一个或多个返回线可以将衬底支撑件的一个或多个出口连接到第一和第二浴，以将第一和第二传热流体返回到第一和第二浴。

公开(公告)号：US06638874B2

公开(公告)日：2003-10-28

申请号：US10198298

申请日：2002-07-17

申请人： Sang In Yi ,  Seowoo Nam ,  Kenlin Huang ,  Padmapani C. Nallan

发明人： Sang In Yi ,  Seowoo Nam ,  Kenlin Huang ,  Padmapani C. Nallan

IPC分类号： H01L21302

CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L21/32136

摘要： One embodiment of the present invention is a method used to fabricate a device on a substrate, which method is utilized at a stage of processing wherein a metal gate stack is disposed or formed over a gate oxide, which metal stack includes a refractory metal layer disposed or formed over a refractory metal barrier/adhesion layer, which method includes steps of: (a) etching the refractory metal layer and stopping on or in the refractory metal barrier/adhesion layer; and (b) etching the refractory metal barrier/adhesion layer using a passivation etching chemistry without oxygen.

摘要翻译： 本发明的一个实施方案是用于在衬底上制造器件的方法，该方法在处理阶段被利用，其中在栅极氧化物上设置或形成金属栅极堆叠，该金属堆叠包括设置的难熔金属层 或形成在难熔金属阻挡层/粘合层上，该方法包括以下步骤：（a）蚀刻难熔金属层并停留在难熔金属屏障/粘合层上或其中; 和（b）使用无氧的钝化蚀刻化学蚀刻难熔金属阻挡层/粘附层。

公开(公告)号：US07297376B1

公开(公告)日：2007-11-20

申请号：US11483842

申请日：2006-07-07

申请人： Kang Sub Yim ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Josephine Ju-Hwei Chang Liu ,  Sang H. Ahn ,  Yi Zheng ,  Sang In Yi ,  Vu Ngoc Tran Nguyen ,  Alexandros T. Demos

发明人： Kang Sub Yim ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Josephine Ju-Hwei Chang Liu ,  Sang H. Ahn ,  Yi Zheng ,  Sang In Yi ,  Vu Ngoc Tran Nguyen ,  Alexandros T. Demos

IPC分类号： H05H1/24

CPC分类号： C23C16/029 ,  C23C16/401 ,  C23C16/56

摘要： A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.

摘要翻译： 通过将基板定位在具有动力电极的处理室内，并且将一种或多种有机硅化合物的流速和流速为1的起始气体混合物流入处理室，从而提供了一种沉积低介电常数膜的方法 或更多的氧化气体，以通过向电极施加RF功率来沉积起始层。 然后将有机硅化合物流速升高至最终流速以沉积第一过渡层，在该第一过渡层上引入一种或多种致孔剂化合物，并且将流速致孔剂化合物倾斜至最终沉积速率，同时沉积第二过渡层 层。 然后通过流动最终致孔剂和有机硅流速来沉积致孔剂掺杂的氧化硅层，直到RF功率关闭。

公开(公告)号：US08702870B2

公开(公告)日：2014-04-22

申请号：US12987948

申请日：2011-01-10

申请人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

发明人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

IPC分类号： B08B9/093

CPC分类号： H01L21/67028 ,  B08B7/0057 ,  H01L21/67115 ,  H01L21/6719

摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.

摘要翻译： 一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。 处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，以及将该室暴露于 紫外线不到一分钟。 可以重复衬底批处理子步骤，直到处理批次中的最后一个衬底。 在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

公开(公告)号：US20110100394A1

公开(公告)日：2011-05-05

申请号：US12987948

申请日：2011-01-10

申请人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

发明人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

IPC分类号： B08B7/00

CPC分类号： H01L21/67028 ,  B08B7/0057 ,  H01L21/67115 ,  H01L21/6719

摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.

摘要翻译： 一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。 处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，以及将该室暴露于 紫外线不到一分钟。 可以重复衬底批处理子步骤，直到处理批次中的最后一个衬底。 在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

公开(公告)号：US20100018548A1

公开(公告)日：2010-01-28

申请号：US12178523

申请日：2008-07-23

申请人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

发明人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

IPC分类号： B08B7/00

CPC分类号： H01L21/67028 ,  B08B7/0057 ,  H01L21/67115 ,  H01L21/6719

摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.

摘要翻译： 一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。 处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，并将该室暴露于 紫外线不到一分钟。 可以重复基底批处理子步骤，直到处理批次中的最后一个基底。 在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。