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1.发明授权Electrical organic thin film switching device switching between detectably different oxidation states 失效电气有机薄膜开关器件在可检测的不同氧化态之间切换
公开(公告)号：US4652894A
公开(公告)日：1987-03-24
申请号：US691600
申请日：1985-01-15
CPC分类号： H01L51/05 , B82Y10/00 , G11C13/0014 , H01L51/0051
摘要： A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between netallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provide switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.
摘要翻译： 电流控制的双稳态阈值或存储器开关包括夹在金属电极之间的多晶金属 - 有机半导体。 与TNAP，DDQ，TCNE，TCNQ，衍生物TCNQ分子或其他此类电子受体络合的铜或银的膜提供高阻抗状态和低阻抗状态之间的切换，其组合延迟和切换时间约为1纳秒。 本发明的复合物的开关行为与受体分子的还原电位有关。
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2.发明授权
公开(公告)号：US4371883A
公开(公告)日：1983-02-01
申请号：US130400
申请日：1980-03-14
CPC分类号： H01L51/05 , B82Y10/00 , G11C13/0014 , H01L51/0051 , Y10S438/90
摘要： A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between metallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provides switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.
摘要翻译： 电流控制的双稳态阈值或存储器开关包括夹在金属电极之间的多晶金属 - 有机半导体。 与TNAP，DDQ，TCNE，TCNQ，衍生物TCNQ分子或其他这样的电子受体络合的铜或银的膜提供高阻抗状态和低阻抗状态之间的切换，其组合的延迟和切换时间为1纳秒级。 本发明的复合物的开关行为与受体分子的还原电位有关。
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