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1.发明授权Method of fabricating a current controlled bistable electrical organic thin film switching device 失效制造电流控制双稳电气有机薄膜开关器件的方法
公开(公告)号：US4507672A
公开(公告)日：1985-03-26
申请号：US385523
申请日：1982-06-07
CPC分类号： H01L51/05 , B82Y10/00 , G11C13/0014 , H01L51/0051
摘要： A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between metallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provides switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.Various other modifications, adaptations and alterations are of course possible in light of the above teachings. Therefore, it should be understood at this time that within the scope of the appended claims the invention may be practiced otherwise than as specifically described.
摘要翻译： 电流控制的双稳态阈值或存储器开关包括夹在金属电极之间的多晶金属 - 有机半导体。 与TNAP，DDQ，TCNE，TCNQ，衍生物TCNQ分子或其他这样的电子受体络合的铜或银的膜提供高阻抗状态和低阻抗状态之间的切换，其组合的延迟和切换时间为1纳秒级。 本发明的复合物的开关行为与受体分子的还原电位有关。 根据上述教导，当然可以进行各种其它修改，改编和改变。 因此，此时应当理解，在所附权利要求的范围内，本发明可以以不同于具体描述的方式实施。
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2.发明授权
公开(公告)号：US4371883A
公开(公告)日：1983-02-01
申请号：US130400
申请日：1980-03-14
CPC分类号： H01L51/05 , B82Y10/00 , G11C13/0014 , H01L51/0051 , Y10S438/90
摘要： A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between metallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provides switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.
摘要翻译： 电流控制的双稳态阈值或存储器开关包括夹在金属电极之间的多晶金属 - 有机半导体。 与TNAP，DDQ，TCNE，TCNQ，衍生物TCNQ分子或其他这样的电子受体络合的铜或银的膜提供高阻抗状态和低阻抗状态之间的切换，其组合的延迟和切换时间为1纳秒级。 本发明的复合物的开关行为与受体分子的还原电位有关。
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3.发明授权Process for preparing tetraselenofulvalenes, and conductive salts obtained therefrom 失效制备四硒富瓦烯的方法和由其获得的导电盐
公开(公告)号：US4246173A
公开(公告)日：1981-01-20
申请号：US899465
申请日：1978-04-24
申请人： Dwaine O. Cowan , Aaron N. Bloch , Klaus Bechgaard
发明人： Dwaine O. Cowan , Aaron N. Bloch , Klaus Bechgaard
IPC分类号： C07D295/20 , C07D345/00 , H01B1/12 , C07D421/02 , C07C163/00
CPC分类号： H01B1/121 , C07D295/20 , C07D345/00
摘要： A multistep process for preparing tetraselenofulvalenes involving the synthesis of 1,3-diselenole-2-selones and -2-thiones from diselenocarbamates and .alpha.-haloketones followed by coupling of the selone or thione using a dechalkogenizing reagent. New highly conductive salts obtained by coupling certain tetraselenofulvalenes with acceptor compounds are also disclosed.
摘要翻译： 一种制备四硒富瓦烯的多步法，该方法涉及从二硒代氨基甲酸酯和α-卤代酮合成1,3-二硒烯-2-酮和2,3-硫酮，然后使用脱色试剂偶联西洛酮或硫酮。 还公开了通过将某些四硒代富瓦烯与受体化合物偶联获得的新的高导电盐。
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4.发明授权Electrical organic thin film switching device switching between detectably different oxidation states 失效电气有机薄膜开关器件在可检测的不同氧化态之间切换
公开(公告)号：US4652894A
公开(公告)日：1987-03-24
申请号：US691600
申请日：1985-01-15
CPC分类号： H01L51/05 , B82Y10/00 , G11C13/0014 , H01L51/0051
摘要： A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between netallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provide switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.
摘要翻译： 电流控制的双稳态阈值或存储器开关包括夹在金属电极之间的多晶金属 - 有机半导体。 与TNAP，DDQ，TCNE，TCNQ，衍生物TCNQ分子或其他此类电子受体络合的铜或银的膜提供高阻抗状态和低阻抗状态之间的切换，其组合延迟和切换时间约为1纳秒。 本发明的复合物的开关行为与受体分子的还原电位有关。
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