公开(公告)号：US5258627A

公开(公告)日：1993-11-02

申请号：US802305

申请日：1991-12-04

申请人： Luca Turin

发明人： Luca Turin

IPC分类号： G01R31/26 ,  H01L51/30 ,  H01L29/28

CPC分类号： G01R31/2648 ,  B82Y10/00 ,  H01L51/0093

摘要： A method and apparatus of testing semiconductor properties of a protein. Mercury electrodes are formed in an aqueous solution of protein and protein is adsorbed of the surface of the mercury electrodes. The electrical properties of the protein adsorbed thereon can be determined by applying current and voltage thereto.

摘要翻译： 测试蛋白质的半导体性质的方法和装置。 汞电极在蛋白质水溶液中形成，蛋白质被吸附在汞电极表面。 可以通过向其上施加电流和电压来确定吸附在其上的蛋白质的电学性质。

公开(公告)号：US4783605A

公开(公告)日：1988-11-08

申请号：US69319

申请日：1987-07-02

申请人： Osamu Tomisawa ,  Satoru Isoda

发明人： Osamu Tomisawa ,  Satoru Isoda

IPC分类号： H03K19/018 ,  H01L21/331 ,  H01L27/28 ,  H01L29/73 ,  H01L29/772 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H03K19/00 ,  B32B9/00 ,  B32B15/04 ,  G01N27/22 ,  H01L29/28

CPC分类号： H01L51/0583 ,  B82Y10/00 ,  H01L29/7722 ,  H01L51/0595 ,  Y10S977/94 ,  Y10T428/261 ,  Y10T428/31685

摘要： A logic circuit has the first electron transmission protein film made of the first electron transmission protein, the second electron transmission protein made of the second electron transmission protein having a redox potential different from that of the first electron transmission protein and glued on top of the first electron transmission film, the third electron transmission protein made of the third electron transmission protein having a redox potential different from that of the second electron transmission protein and glued on top of the second electron transmission protein film, an electrode connected to the first electron transmission protein film, an electrode having an electrical influence on the second electron transmission protein film, and an electrode connected to the third electron transmission protein film to form transistors making use of differences in redox potential among the respective electron transmission proteins for performing a logical operation for a plurality of inputs.

摘要翻译： 逻辑电路具有由第一电子传输蛋白构成的第一电子传输蛋白膜，由第二电子传输蛋白质制成的第二电子传输蛋白具有与第一电子传输蛋白的氧化还原电位不同的第二电子传输蛋白，并粘贴在第一电子传输蛋白的顶部 电子传输膜，由具有不同于第二电子透射蛋白的氧化还原电位的第三电子传输蛋白质制成的胶合在第二电子传输蛋白膜的顶部上的第三电子传输蛋白，连接到第一电子传输蛋白的电极 膜，具有对第二电子传输蛋白膜的电影响的电极和连接到第三电子透射蛋白膜的电极，以形成利用各个电子透射蛋白质之间的氧化还原电位差异的晶体管，以执行用于 复数 的投入。

公开(公告)号：US4652894A

公开(公告)日：1987-03-24

申请号：US691600

申请日：1985-01-15

申请人： Richard S. Potember ,  Theodore O. Poehler, Jr. ,  Dwaine O. Cowan

发明人： Richard S. Potember ,  Theodore O. Poehler, Jr. ,  Dwaine O. Cowan

IPC分类号： G11C11/42 ,  G11C13/02 ,  H01L45/00 ,  H01L51/00 ,  H01L51/30 ,  H01L29/28

CPC分类号： H01L51/05 ,  B82Y10/00 ,  G11C13/0014 ,  H01L51/0051

摘要： A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between netallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provide switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.

摘要翻译： 电流控制的双稳态阈值或存储器开关包括夹在金属电极之间的多晶金属 - 有机半导体。 与TNAP，DDQ，TCNE，TCNQ，衍生物TCNQ分子或其他此类电子受体络合的铜或银的膜提供高阻抗状态和低阻抗状态之间的切换，其组合延迟和切换时间约为1纳秒。 本发明的复合物的开关行为与受体分子的还原电位有关。

公开(公告)号：US4586062A

公开(公告)日：1986-04-29

申请号：US468673

申请日：1983-02-22

申请人： Serge J. H. Bouffard ,  Libero Zuppiroli ,  Denis Jerome ,  Klaus Bechgaard

发明人： Serge J. H. Bouffard ,  Libero Zuppiroli ,  Denis Jerome ,  Klaus Bechgaard

IPC分类号： H01L39/22 ,  H01L39/12 ,  H01L39/24 ,  H01L29/161 ,  H01L29/28 ,  H01L39/02

CPC分类号： H01L39/249 ,  H01L39/121 ,  H01L39/2493 ,  Y10S505/802 ,  Y10S505/873 ,  Y10S505/874

摘要： Microcircuits composed of a plurality of alternating conducting and insulating regions are formed in a substrate of an organic quasi-unidimensional conductor such as .DELTA..sup.2,2 bi-4,5-dimethyl-1,3-diselenolylidene upon irradiation of the substrate with a precise beam of electrons having an energy of at least 1 keV, preferably at least 8 keV, which forms the insulating regions. When exposed to cryogenic temperatures the non-irradated conducting regions become super conducting. Using electron beam irradiations, sub-micronic resolution as low as 100 .ANG. can be achieved. Microcircuits having Josephson junctions and superconducting quantum interference devices are described.

摘要翻译： 由多个交替的导电绝缘区域构成的微电路形成在有机准一维导体的基板中，例如DELTA 2,2双-4,5-二甲基-1,3-亚硒基亚基，在基板上照射精确 电子束具有形成绝缘区域的至少1keV，优选至少8keV的能量。 当暴露于低温时，非辐射导电区域变得超导。 使用电子束照射，可以实现低至100安培的亚微米分辨率。 描述了具有约瑟夫逊结和超导量子干涉装置的微电路。

公开(公告)号：US4443532A

公开(公告)日：1984-04-17

申请号：US288002

申请日：1981-07-29

申请人： David C. Joy ,  Martin L. Kaplan ,  Paul H. Schmidt

发明人： David C. Joy ,  Martin L. Kaplan ,  Paul H. Schmidt

IPC分类号： G03F7/004 ,  H01L51/30 ,  H01L29/28

CPC分类号： G03F7/0045 ,  H01L51/0053

摘要： Materials that change crystal structure upon radiation with a beam of electrons have been found. These materials, such as perylene dianhydride, naphthalene dianhydride, and perylene tetracarboxylic diimide based compounds undergo a transformation from one crystalline structure to another upon exposure to energetic electrons. This transformation causes a change in optical, electrical, and solubility properties. In this manner, these materials are useful as resists for delineating patterns, as optical storage media, and/or in processes for producing patterns of conductive materials such as employed in semiconductor technology.

摘要翻译： 已经发现了用电子束在辐射时改变晶体结构的材料。 这些材料，例如苝二酐，萘二酐和苝四羧酸二酰亚胺基化合物在暴露于高能电子时，从一种晶体结构转变成另一种结晶。 这种转变导致光学，电学和溶解性质的改变。 以这种方式，这些材料可用作描绘图案的光刻胶，作为光学存储介质，和/或用于制造诸如半导体技术中使用的导电材料图案的工艺。

公开(公告)号：US4245161A

公开(公告)日：1981-01-13

申请号：US84048

申请日：1979-10-12

申请人： Frank J. Crowne

发明人： Frank J. Crowne

IPC分类号： H01L51/50 ,  H01L33/00 ,  H01L29/28 ,  H01L45/00

CPC分类号： H01L51/5012

摘要： A Peierls transition far-infrared radiation source comprised of a block of an organic one dimensional metal stressed at the ends and having a potential difference applied.

摘要翻译： Peierls过渡远红外辐射源由在端部受应力并且施加电势差的有机一维金属的块组成。

公开(公告)号：US5789818A

公开(公告)日：1998-08-04

申请号：US667774

申请日：1996-06-21

申请人： Robert H. Havemann

发明人： Robert H. Havemann

IPC分类号： H01G4/06 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L29/28 ,  H01L23/54

CPC分类号： H01L23/5329 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/528 ,  H01L2924/0002

摘要： A semiconductor device and method having a low-permittivity material between closely-spaced leads in order to decrease unwanted capacitance, while having a more structurally strong dielectric between widely-spaced leads where capacitance is not as critical. Metal layer 14 is deposited on a substrate 12 of a semiconductor wafer 10, where the metal layer 14 has a first portion 15 and a second portion 17. Widely-spaced leads 16 are formed in the first portion 15 of the metal layer 14, and a first structural dielectric layer 26 is deposited on at least the widely-spaced leads. Closely-spaced leads 18 are formed in the second portion 17 of the metal layer 14, and low-permittivity material 34 is deposited between closely-spaced leads 18. A second structural dielectric layer 36 is deposited on at least low-permittivity material 34 and closely-spaced leads 18. An advantage of the invention includes improved structural strength by placing structurally weak low-permittivity material only where needed, in areas having closely-spaced leads.

摘要翻译： 一种在紧密间隔的引线之间具有低介电常数材料的半导体器件和方法，以便减少不必要的电容，同时在电容不如关键的宽间距引线之间具有更结构强的电介质。 金属层14沉积在半导体晶片10的基板12上，其中金属层14具有第一部分15和第二部分17.在金属层14的第一部分15中形成宽间距的引线16，并且 至少在宽间隔的引线上沉积第一结构介电层26。 紧密间隔的引线18形成在金属层14的第二部分17中，并且低电容率材料34沉积在紧密间隔的引线18之间。第二结构介电层36沉积在至少低介电常数材料34上， 紧密间隔的引线18.本发明的优点包括通过仅在需要时在具有紧密间隔的引线的区域中放置结构弱的低介电常数材料来改善结构强度。

公开(公告)号：US5317169A

公开(公告)日：1994-05-31

申请号：US861633

申请日：1992-04-01

申请人： Tsuyoshi Nakano ,  Shuji Doi ,  Takanobu Noguchi ,  Toshihiro Ohnishi ,  Yasushi Iyechika

发明人： Tsuyoshi Nakano ,  Shuji Doi ,  Takanobu Noguchi ,  Toshihiro Ohnishi ,  Yasushi Iyechika

IPC分类号： C08G61/00 ,  C09K11/06 ,  H01L51/00 ,  H01L51/30 ,  H01L51/50 ,  H05B33/14 ,  H01L29/28

CPC分类号： H05B33/14 ,  C08G61/00 ,  C09K11/06 ,  H01L51/0038 ,  H01L51/5012 ,  H01L51/005 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/007 ,  H01L51/5048 ,  H01L51/5088

摘要： Disclosed is an organic electroluminescence device having a light emitting layer or a light emitting layer and a charge transport layer disposed between a pair of electrodes at least one of which is transparent or semi-transparent, the light emitting layer comprising a conjugated polymer having a repeating unit represented by the general formula (1):--Ar.sub.1 --CH.dbd.CH-- (1)where Ar.sub.1 represents an aromatic hydrocarbon group having 6 to 14 carbon atoms or a nuclear-substituted group in which the aromatic hydrocarbon group is substituted by one or two selected from the group consisting of hydrocarbon groups having 1 to 22 carbon atoms and alkoxy groups having 1 to 22 carbon atoms. According to the present invention, the use of a polymer intermediate of the conjugated polymer or the conjugated polymer soluble to a solvent as a light emitting material, a charge transport material or a buffer layer to an electrode enables an EL device having a large area to be easily made.

摘要翻译： 公开了一种有机电致发光器件，其具有发光层或发光层和电荷传输层，电荷输送层设置在至少一个透明或半透明的一对电极之间，发光层包含具有重复的共轭聚合物 由通式（1）表示的单元：-Ar1-CH = CH-（1）其中Ar1表示具有6至14个碳原子的芳族烃基或其中芳族烃基被一个或者多个碳原子取代的核取代基 两个选自由具有1至22个碳原子的烃基和具有1至22个碳原子的烷氧基组成的组。 根据本发明，共轭聚合物或可溶于溶剂的共轭聚合物的聚合物中间体作为发光材料，电荷输送材料或缓冲层到电极的使用使得能够将具有大面积的EL器件 容易制作

公开(公告)号：US4761677A

公开(公告)日：1988-08-02

申请号：US8139

申请日：1987-01-22

申请人： Nobuo Sasaki

发明人： Nobuo Sasaki

IPC分类号： H01L21/312 ,  H01L21/768 ,  H01L23/532 ,  H01L51/30 ,  H01L29/28

CPC分类号： H01L23/5328 ,  H01L21/312 ,  H01L21/768 ,  H01L51/0041 ,  H01L2924/0002

摘要： A reliable multilevel interconnection structure is attained by using polyacetylene layers. Nondoped polyacetylene is dielectric but is conductive when it is doped with an impurity such as AsF.sub.5, which makes it possible to eliminate the necessity of opening a contact hole or through hole in an insulating layer in a process for manufacturing a multilevel interconnection structure so that a disconnection and/or short circuit does not occur due to the evenness of the layers even if the layer of numbers is increased.

摘要翻译： 通过使用聚乙炔层可以获得可靠的多层互连结构。 非掺杂聚乙炔是电介质的，但是当其掺杂有诸如AsF 5的杂质时是导电的，这使得可以在制造多层互连结构的工艺中消除在绝缘层中打开接触孔或通孔的必要性， 即使数字层增加，也不会由于层的均匀性而发生断开和/或短路。

公开(公告)号：US4722913A

公开(公告)日：1988-02-02

申请号：US920251

申请日：1986-10-17

申请人： Robert O. Miller

发明人： Robert O. Miller

IPC分类号： H01L23/52 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/263 ,  H01L29/28

CPC分类号： H01L21/76838 ,  H01L21/3146 ,  H01L21/76834 ,  H01L2924/0002 ,  Y10S438/934

摘要： In the manufacture of integrated circuits, an undoped wide band-gap semiconductor is used for the insulating layer to isolate the silicon substrate from the metal interconnection pattern. To provide conductive vias through the insulating layer for connection to the source and drain of the transistors of the circuit, the wide band-gap semiconductor is implanted with a dopant selectively in the portion overlying the source and drain for making the implanted portion of low resistivity and of the conductivity type of the source and drain. Preferably, carbon is the wide band-gap semiconductor and nitrogen is the dopant implanted.