公开(公告)号：US20240231409A1

公开(公告)日：2024-07-11

申请号：US18507084

申请日：2023-11-12

Applicant: Richtek Technology Corporation

Inventor： Chih-hsien Wang ,  Chu-hua Lee

IPC: G05F3/20 ,  G05F3/24 ,  G05F3/26

CPC classification number: G05F3/205 ,  G05F3/242 ,  G05F3/262

Abstract: A body bias circuit configured to generate a body bias to a body of a MOS switch. The body bias circuit includes: an intrinsic MOS device having the same conductivity type with the MOS switch and having an intrinsic threshold voltage; and an operational regulation circuit coupled to the intrinsic MOS device and configured to generate the body bias according to a voltage of one terminal of the MOS switch and the intrinsic threshold voltage, such that a threshold voltage of the MOS switch inversely tracking the intrinsic threshold voltage. The body bias is lower than each voltage of both terminals of the MOS switch. The body bias is configured to an extent that an ON resistance of the MOS switch is lower than a predetermined value during a conducting operation, and/or a leakage current of the MOS switch is lower than a predetermined value during a non-conducting operation.