公开(公告)号：US20220406691A1

公开(公告)日：2022-12-22

申请号：US17561968

申请日：2021-12-26

Applicant: Richtek Technology Corporation

Inventor： Lung-Sheng Lin ,  Chih-Feng Huang

IPC: H01L23/495 ,  H01L23/31

Abstract: An intelligent power module, which includes: a lead frame; a plurality of signal processing chips, disposed on the lead frame; at least one bridge die, configured to operably transmit signals among the signal processing chips; and a package structure, encapsulating the lead frame, the signal processing chips and the bridge die.

公开(公告)号：US11646364B2

公开(公告)日：2023-05-09

申请号：US17187540

申请日：2021-02-26

Applicant: RICHTEK TECHNOLOGY CORPORATION

Inventor： Chih-Feng Huang ,  Lung-Sheng Lin

IPC: H01L29/739 ,  H01L29/66 ,  H01L27/07 ,  H01L27/02

CPC classification number: H01L29/7393 ,  H01L27/0248 ,  H01L27/0783 ,  H01L29/66325

Abstract: A power device which is formed on a semiconductor substrate includes: a lateral insulated gate bipolar transistor (LIGBT), a PN diode and a clamp diode. The PN diode is connected in parallel to the LIGBT. The clamp diode has a clamp forward terminal and a clamp reverse terminal, which are electrically connected to a drain and a gate of the LIGBT, to clamp a gate voltage applied to the gate not to be higher than a predetermined voltage threshold.

公开(公告)号：US20210305414A1

公开(公告)日：2021-09-30

申请号：US17187540

申请日：2021-02-26

Applicant: RICHTEK TECHNOLOGY CORPORATION

Inventor： Chih-Feng Huang ,  Lung-Sheng Lin

IPC: H01L29/739 ,  H01L27/02 ,  H01L27/07 ,  H01L29/66

Abstract: A power device which is formed on a semiconductor substrate includes: a lateral insulated gate bipolar transistor (LIGBT), a PN diode and a clamp diode. The PN diode is connected in parallel to the LIGBT. The clamp diode has a clamp forward terminal and a clamp reverse terminal, which are electrically connected to a drain and a gate of the LIGBT, to clamp a gate voltage applied to the gate not to be higher than a predetermined voltage threshold.

公开(公告)号：US11876093B2

公开(公告)日：2024-01-16

申请号：US17142154

申请日：2021-01-05

Applicant: RICHTEK TECHNOLOGY CORPORATION

Inventor： Chih-Feng Huang ,  Lung-Sheng Lin

IPC: H01L27/07 ,  H01L29/739 ,  H01L29/66 ,  H01L21/8249 ,  H01L29/872

CPC classification number: H01L27/0722 ,  H01L21/8249 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66325 ,  H01L29/7393 ,  H01L29/872

Abstract: A power device which is formed on a semiconductor substrate includes: plural lateral insulated gate bipolar transistors (LIGBTs) and a forward conductive unit. The plural LIGBTs are connected in parallel to each other. The forward conductive unit is connected in parallel to the plural LIGBTs. The forward conductive unit consists of a PN diode and a Schottky diode connected in parallel to each other. The PN diode and the Schottky diode share a same N-type region, a reverse terminal, an N-type extension region, an field oxide region, a gate, and a P-type well in an epitaxial layer. The N-type region and the P-type well form a PN junction, wherein the PN junction has a staggered comb-teeth interface from top view. A metal line extends on the staggered comb-teeth interface and alternatingly contacts the N-type region and the P-type well.

公开(公告)号：US20220406693A1

公开(公告)日：2022-12-22

申请号：US17736445

申请日：2022-05-04

Applicant: Richtek Technology Corporation

Inventor： Lung-Sheng Lin ,  Chih-Feng Huang

IPC: H01L23/495 ,  H01L23/00 ,  H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

Abstract: An intelligent power module includes: an encapsulating material structure; a lead frame which is at least partially encapsulated inside the encapsulating material structure, wherein all portions of the lead frame encapsulated inside the encapsulating material structure are at a same planar level; and a heat dissipation structure, which is connected to the lead frame.

公开(公告)号：US20210305242A1

公开(公告)日：2021-09-30

申请号：US17142154

申请日：2021-01-05

Applicant: RICHTEK TECHNOLOGY CORPORATION

Inventor： Chih-Feng Huang ,  Lung-Sheng Lin

IPC: H01L27/07 ,  H01L29/739 ,  H01L29/66 ,  H01L29/872 ,  H01L21/8249

Abstract: A power device which is formed on a semiconductor substrate includes: plural lateral insulated gate bipolar transistors (LIGBTs) and a forward conductive unit. The plural LIGBTs are connected in parallel to each other. The forward conductive unit is connected in parallel to the plural LIGBTs. The forward conductive unit consists of a PN diode and a Schottky diode connected in parallel to each other. The PN diode and the Schottky diode share a same N-type region, a reverse terminal, an N-type extension region, an field oxide region, a gate, and a P-type well in an epitaxial layer. The N-type region and the P-type well form a PN junction, wherein the PN junction has a staggered comb-teeth interface from top view. A metal line extends on the staggered comb-teeth interface and alternatingly contacts the N-type region and the P-type well.