公开(公告)号：US07109131B2

公开(公告)日：2006-09-19

申请号：US10456850

申请日：2003-06-06

申请人： Robert B. Herring ,  Cole Porter ,  Travis Dodwell ,  Ed Nazareno ,  Chris Ratliff ,  Anindita Chatterji

发明人： Robert B. Herring ,  Cole Porter ,  Travis Dodwell ,  Ed Nazareno ,  Chris Ratliff ,  Anindita Chatterji

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L29/76 ,  C23C16/00

CPC分类号： H01L21/32105 ,  H01L21/28061 ,  H01L21/28247 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67253 ,  H01L29/4941

摘要： The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.

摘要翻译： 本发明一般涉及半导体制造。 更具体地，本发明涉及相对于在半导体衬底上形成的另一种材料选择性地氧化一种材料的系统和方法。 提供了一种用于执行该方法的富氢氧化系统，其中包括创新的安全特征以避免在富含氢气氛的情况下固有的人员和设备的危险。