公开(公告)号：US10649021B2

公开(公告)日：2020-05-12

申请号：US16088099

申请日：2017-03-01

申请人： Robert Bosch GmbH

发明人： Alexander Mann ,  Daniel Schneider ,  Henning Lohmeyer

IPC分类号： G01R31/26 ,  H01L21/66 ,  H01L29/417 ,  G01R31/40 ,  H01L23/528 ,  H03K17/14

摘要： A power transistor, a driver and an output stage. The power transistor includes an active region and a metallization level located above the active region for power distribution and for detecting an imminent metallization error induced by stress (RPP stress) caused by repeated power pulses. The power transistor also includes a further metallization level, which is located above the metallization level and in which galvanically isolated metal elements extend mutually parallel in a direction of extent, of which one pair is used for energizing the power transistor. It is a characteristic of the power transistor that at least one cut-out is formed above the active region in the further metallization level. The cut-out has the effect of decreasing heat dissipation. The power transistor is thereby heated more intensely in the localized region, so that large temperature gradients occur in the transition region defined by the edges of the metal elements.

公开(公告)号：US20190086467A1

公开(公告)日：2019-03-21

申请号：US16088099

申请日：2017-03-01

申请人： Robert Bosch GmbH

发明人： Alexander Mann ,  Daniel Schneider ,  Henning Lohmeyer

IPC分类号： G01R31/26 ,  H01L23/528 ,  H03K17/14 ,  G01R31/40

摘要： A power transistor, a driver and an output stage. The power transistor includes an active region and a metallization level located above the active region for power distribution and for detecting an imminent metallization error induced by stress (RPP stress) caused by repeated power pulses. The power transistor also includes a further metallization level, which is located above the metallization level and in which galvanically isolated metal elements extend mutually parallel in a direction of extent, of which one pair is used for energizing the power transistor. It is a characteristic of the power transistor that at least one cut-out is formed above the active region in the further metallization level. The cut-out has the effect of decreasing heat dissipation. The power transistor is thereby heated more intensely in the localized region, so that large temperature gradients occur in the transition region defined by the edges of the metal elements.