公开(公告)号：US4118795A

公开(公告)日：1978-10-03

申请号：US718243

申请日：1976-08-27

申请人： Robert Charles Frye ,  Alan Harry Katz ,  Charles Robert Hewes

发明人： Robert Charles Frye ,  Alan Harry Katz ,  Charles Robert Hewes

IPC分类号： G11C19/28 ,  H01L29/768 ,  G11C21/00 ,  G11C7/00 ,  G11C11/34

CPC分类号： H01L29/76825 ,  G11C19/285

摘要： Insulated gate field effect transistor charge regenerator amplifiers respectively cross-couple the output regions of a pair of two-phase CCD structures with the input regions of those structures. Each amplifier senses the level of binary data charge packets from the output region of one of the shift register structures and in response thereto applies a regenerated and inverted binary data charge packet to the input region of the other shift register structure. One of the amplifiers includes logic gating for inputting and outputting data into and from the shift register structure.A charge regenerator for a two-phase CCD structure comprising first and second shift registers. The charge regenerator comprises a source follower amplifier including a driver transistor, a load transistor and a positive feedback transistor connected between the gate and source of the driver transistor. The gate of the driver transistor is precharged to a predetermined level prior to sensing of the output region charge level and the regenerator inserts into the input region a charge packet corresponding to the data level sensed at the output region, without inversion.

摘要翻译： 绝缘栅场效应晶体管电荷再生器放大器分别将一对两相CCD结构的输出区域与这些结构的输入区域交叉耦合。 每个放大器感测来自移位寄存器结构之一的输出区域的二进制数据电荷分组的电平，并且响应于此，将再生和反相二进制数据电荷分组应用于另一个移位寄存器结构的输入区域。 其中一个放大器包括用于将数据输入和输出到移位寄存器结构中的逻辑门控。