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公开(公告)号：US4118795A
公开(公告)日：1978-10-03
申请号：US718243
申请日：1976-08-27
IPC分类号： G11C19/28 , H01L29/768 , G11C21/00 , G11C7/00 , G11C11/34
CPC分类号： H01L29/76825 , G11C19/285
摘要： Insulated gate field effect transistor charge regenerator amplifiers respectively cross-couple the output regions of a pair of two-phase CCD structures with the input regions of those structures. Each amplifier senses the level of binary data charge packets from the output region of one of the shift register structures and in response thereto applies a regenerated and inverted binary data charge packet to the input region of the other shift register structure. One of the amplifiers includes logic gating for inputting and outputting data into and from the shift register structure.A charge regenerator for a two-phase CCD structure comprising first and second shift registers. The charge regenerator comprises a source follower amplifier including a driver transistor, a load transistor and a positive feedback transistor connected between the gate and source of the driver transistor. The gate of the driver transistor is precharged to a predetermined level prior to sensing of the output region charge level and the regenerator inserts into the input region a charge packet corresponding to the data level sensed at the output region, without inversion.
摘要翻译： 绝缘栅场效应晶体管电荷再生器放大器分别将一对两相CCD结构的输出区域与这些结构的输入区域交叉耦合。 每个放大器感测来自移位寄存器结构之一的输出区域的二进制数据电荷分组的电平，并且响应于此，将再生和反相二进制数据电荷分组应用于另一个移位寄存器结构的输入区域。 其中一个放大器包括用于将数据输入和输出到移位寄存器结构中的逻辑门控。
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公开(公告)号：US4071775A
公开(公告)日：1978-01-31
申请号：US672939
申请日：1976-04-02
申请人： Charles Robert Hewes
发明人： Charles Robert Hewes
IPC分类号： H03F3/45 , G11C19/28 , G11C27/04 , H01L21/339 , H01L21/8234 , H01L27/06 , H01L29/762 , H01L29/768 , H03F3/70 , H03H15/02 , H01L29/78 , H03H7/28
CPC分类号： G11C19/285 , H01L29/76816
摘要： A charge coupled amplifier wherein an output voltage proportional to the difference between two input voltages is achieved through use of different value capacitances associated with the signal input and signal output structures of the amplifier. The input capacitance is defined in one embodiment using a doped substrate region beneath a biased electrode located between the signal input gates. In a modified structure, increased area input gate electrodes are used to define the input capacitance. A CCD transversal filter employing split electrode tap weighting which together with associated charge coupled input and output amplifiers form part of a single semiconductor chip.
摘要翻译： 电荷耦合放大器，其中通过使用与放大器的信号输入和信号输出结构相关联的不同值电容来实现与两个输入电压之间的差成比例的输出电压。 在一个实施例中，使用位于信号输入门之间的偏置电极下方的掺杂衬底区域限定输入电容。 在改进的结构中，使用增加面积的输入栅电极来定义输入电容。 采用分离电极抽头加权的CCD横向滤波器，与相关的电荷耦合输入和输出放大器一起形成单个半导体芯片的一部分。
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公开(公告)号：US4076960A
公开(公告)日：1978-02-28
申请号：US735916
申请日：1976-10-27
CPC分类号： G10L25/00
摘要： Homomorphic speech processing apparatus utilizing CCD implementation of the CZT algorithm for performing DFT and IDFT operations in extracting representations of formants and/or pitch data from sampled speech inputs. Embodiments also are described for performing the DFT and IDFT operations (a) by generating n-transforms and averaging the result and (b) for performing a sliding CZT transform. In a further embodiment, a smoothed spectrum of vocal tract data is obtained using a CCD filter with a low pass response. The CCD implementation includes transversal filters employing split-electrode signal amplitude weighting.
摘要翻译： 同型语音处理装置利用CZT算法的CCD实现来执行DFT和IDFT操作，以从采样语音输入提取共振峰和/或音调数据的表示。 对实施例进行描述，用于通过产生n变换并对结果进行平均来执行DFT和IDFT操作（a），并且（b）用于执行滑动CZT变换。 在另一个实施例中，使用具有低通响应的CCD滤波器获得声道数据的平滑频谱。 CCD实现包括采用分裂电极信号幅度加权的横向滤波器。
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