公开(公告)号：US4299680A

公开(公告)日：1981-11-10

申请号：US108888

申请日：1979-12-31

申请人： Robert E. Fontana, Jr. ,  David C. Bullock ,  Shalendra K. Singh ,  John M. Bush

发明人： Robert E. Fontana, Jr. ,  David C. Bullock ,  Shalendra K. Singh ,  John M. Bush

IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F10/08 ,  H01F41/34 ,  H01L21/302 ,  H01L21/3065 ,  C23C15/00 ,  C23F1/02

CPC分类号： H01F41/34

摘要： Method of fabricating a magnetic bubble memory device in which the magnetizable upper overlay pattern of magnetically soft material, e.g. permalloy, defining bubble propagation elements and bubble function-determining components as located above a bubble-supporting magnetic film is disposed in a wholly planar configuration to avoid bubble propagation anomalies encountered with typical non-planar overlay patterns of magnetically soft material. The fabrication method provides for the consecutive deposition onto a substrate having a magnetic film capable of supporting magnetic bubbles of a layer of non-magnetic electrically conductive material, a layer of insulating material, and a layer of magnetically soft material, such as permalloy. Patterning of the layers then proceeds from the uppermost layer downwardly in stages to form magnetically soft components defining the elements of magnetic bubble propagation paths and magnetic bubble function-determining components as a planar upper overlay pattern from the layer of magnetically soft material, insulation spacers from the layer of insulating material, and control conductors as a planar lower overlay pattern from the layer of non-magnetic electrically conductive material. Patterning of the respective layers is preferably achieved by ion milling of selected portions of the layer of magnetically soft material as defined by a first mask and by sequential plasma etching of selected portions of the underlying layer of insulating material and the layer of non-magnetic electrically conductive material as defined by a second composite mask partially comprising the overlay pattern of magnetically soft material and photoresist material.

摘要翻译： 制造磁性气泡存储装置的方法，其中磁性软材料的可磁化上覆盖图案，例如， 坡莫合金，定义气泡传播元件和气泡功能确定部件位于泡沫支撑磁性膜之上，以完全平面的形式设置，以避免在磁性软材料的典型非平面覆盖图案中遇到气泡传播异常。 该制造方法提供了连续沉积到具有能够支撑非磁性导电材料层的磁性膜，绝缘材料层和诸如坡莫合金的磁软材料层的磁性膜的基板上。 层的图案化然后从最上层逐级进行，以形成磁性软组分，其限定磁性气泡传播路径的元素和磁气泡函数确定组分作为来自磁软材料层的平面上覆盖图案，绝缘间隔物 绝缘材料层，以及作为来自非磁性导电材料层的平面下覆盖图案的控制导体。 各层的图案化优选通过对由第一掩模限定的软磁性材料层的选定部分进行离子研磨，并且通过顺序等离子体蚀刻绝缘材料的下层的选定部分和非磁性电学层 由第二复合掩模限定的导电材料部分地包括磁软材料和光致抗蚀剂材料的覆盖图案。

公开(公告)号：US4613953A

公开(公告)日：1986-09-23

申请号：US487554

申请日：1983-04-22

申请人： John M. Bush ,  David L. Ruhberg

发明人： John M. Bush ,  David L. Ruhberg

IPC分类号： G06F12/02 ,  G06F12/06

CPC分类号： G06F12/0223 ,  G06F12/0623

摘要： An addressing and control system for a mass memory which is partitioned into selectable pages of individually specified size. The invention generates a composite address for the mass memory so that a microcomputer of limited address size can access the mass memory by individually specified page. One circuit implementation utilizes a register to latch page size and selection information for subsequent combination with address information to generate a full address for the mass memory. In that situation, the size register multiplexes the address bus information and page selection information to maintain correspondence between the specified size of the page and the total addressing bits available. In another form, the invention provides for supplementing the number of address bus bits with bits transmitted over the data bus to extend the bit length of the address used to access the mass memory.

摘要翻译： 用于大容量存储器的寻址和控制系统，其被划分为单独指定大小的可选页面。 本发明生成用于大容量存储器的复合地址，使得有限地址大小的微型计算机可以通过单独指定的页访问大容量存储器。 一个电路实现利用寄存器来锁定页面大小和选择信息，以便随后与地址信息组合以产生大容量存储器的完整地址。 在这种情况下，大小寄存器复用地址总线信息和页面选择信息，以保持页面的指定大小与可用的总寻址位之间的对应关系。 在另一种形式中，本发明提供了通过数据总线发送的比特的地址总线比特数量，以扩展用于访问大容量存储器的地址的比特长度。