System for biasing a synthetic free layer in a magnetoresistance sensor
    1.
    发明授权
    System for biasing a synthetic free layer in a magnetoresistance sensor 有权
    用于在磁阻传感器中偏置合成自由层的系统

    公开(公告)号:US06201673B1

    公开(公告)日:2001-03-13

    申请号:US09285318

    申请日:1999-04-02

    IPC分类号: G11B5127

    摘要: A system and method for providing a magnetoresistive head is disclosed. The method and system include providing a spin valve including a synthetic free layer. The synthetic free layer includes a ferromagnetic layer. The method and system also include providing an antiferromagnetic biasing layer exchange coupled to a first portion of the ferromagnetic layer. The antiferromagnetic biasing layer magnetically biases the synthetic free layer to ensure the single domain structure and reduce noise.

    摘要翻译: 公开了一种用于提供磁阻头的系统和方法。 该方法和系统包括提供包括合成自由层的自旋阀。 合成自由层包括铁磁层。 该方法和系统还包括提供耦合到铁磁层的第一部分的反铁磁偏置层交换。 反铁磁偏置层对合成自由层进行磁偏置,以确保单畴结构并降低噪声。