Production of a Gas-Tight, Crystalline Mullite Layer by Using a Thermal Spraying Method
    3.
    发明申请
    Production of a Gas-Tight, Crystalline Mullite Layer by Using a Thermal Spraying Method 审中-公开
    通过使用热喷涂方法生产气体密实的结晶莫来石层

    公开(公告)号:US20080193674A1

    公开(公告)日:2008-08-14

    申请号:US11664536

    申请日:2005-09-17

    IPC分类号: H05H1/24

    摘要: The invention relates to a method for producing a tight crystalline mullite layer on a metallic and/or ceramic substrate by using the plasma spraying technique. To this end, a sol containing mullite precursors with a proportion of 2 to 25% by weight with regard to the oxides (3 Al2O3/2 SiO2) is used as a spraying additive. This method is carried out under atmospheric conditions, and the sol is injected with a focussed jet and with an overpressure of at least one I bar into the plasma flame. An additional compacting of the layer can be advantageously effected by repeatedly passing over the layer with the plasma flame. The method is particularly suited for applying a gas-tight crystalline mullite layer to a steel substrate.

    摘要翻译: 本发明涉及通过使用等离子喷涂技术在金属和/或陶瓷基板上制造紧密结晶莫来石层的方法。 为此,相对于氧化物(3 Al 2 O 3/2 SiO 2),含有比例为2〜25重量%的莫来石前体的溶胶, 2 )用作喷雾添加剂。 该方法在大气条件下进行,并且将溶胶注入聚焦射流并且将至少一个I巴的超压注入等离子体火焰中。 可以通过用等离子体火焰重复地穿过层来有利地实现层的另外的压实。 该方法特别适用于向钢基材施加气密结晶莫来石层。