公开(公告)号：US06391804B1

公开(公告)日：2002-05-21

申请号：US09590824

申请日：2000-06-09

申请人： Robert W. Grant ,  Benjamin J. Petrone ,  Ronald F. Klopp ,  Theodore E. Farley ,  Paul D. Mumbauer

发明人： Robert W. Grant ,  Benjamin J. Petrone ,  Ronald F. Klopp ,  Theodore E. Farley ,  Paul D. Mumbauer

IPC分类号： H01L21324

CPC分类号： H01L21/67115 ,  H01L21/67109

摘要： Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor where uniformity of temperature across the width and breadth of a semiconductor wafer is achieved by placement of a dome-shaped thermal insert in close proximity to a semiconductor wafer in process. Thermal energy is absorbed by the thermal insert from the semiconductor wafer at a high rate where the spacing between the thermal insert and semiconductor wafer is at a minimum and at a gradually reduced rate where the spacing between the thermal insert and semiconductor wafer is gradually increased. A guard ring is also incorporated to negate bottom side reflective thermal energy exposure.

摘要翻译： 在快速热处理反应器中用于均匀直接辐射加热的方法和装置，其中半导体晶片的宽度和宽度上的温度均匀度通过将半圆形热插入件放置在非常接近半导体晶片的过程中来实现。 热能被热插入物从半导体晶片以高速率吸收，其中热插入物和半导体晶片之间的间隔处于最小并且逐渐降低的速率，其中热插入物和半导体晶片之间的间隔逐渐增加。 还结合了保护环以抵消底部反射热能暴露。