公开(公告)号：US4852516A

公开(公告)日：1989-08-01

申请号：US091651

申请日：1987-09-01

申请人： Richard H. Rubin ,  Benjamin J. Petrone ,  Richard C. Heim ,  Scott M. Pawenski

发明人： Richard H. Rubin ,  Benjamin J. Petrone ,  Richard C. Heim ,  Scott M. Pawenski

IPC分类号： H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67748 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/67196 ,  Y10S134/902

摘要： A self-contained modular processing apparatus is disclosed for processing workpieces, and in particular, silicon wafers. The apparatus is constructed of framed modules which plug into a service facility docking subassembly and interlock therewith to make up a complete modular processing system for wafer processing. Each module may be provided with its own wafer transporting mechanism and includes a built-in CPU such that each module is an independent, stand-alone processing unit. Each processing unit, by being capable of independent operation, functions as a building block to configure a modular processing system capable of handling wafer flow in multiple directions while performing a multitude of processing functions or operations. Individual modules are arranged along a line of single fold symmetry such that a single transport mechanism may be employed for transferring wafers among adjacent modules.

摘要翻译： 公开了一种独立的模块化处理装置，用于处理工件，特别是硅晶片。 该装置由框架模块构成，该框架模块插入服务设施对接子组件并与之互锁，构成用于晶片处理的完整的模块化处理系统。 每个模块可以设置有其自己的晶片传送机构，并且包括内置CPU，使得每个模块是独立的独立处理单元。 每个处理单元通过独立操作能够起到构建模块的作用，以配置能够处理多个处理功能或操作的多个方向上的晶片流的模块化处理系统。 单个模块沿着单折叠对称线布置，使得单个传送机构可用于在相邻模块之间传送晶片。

公开(公告)号：US4722298A

公开(公告)日：1988-02-02

申请号：US865251

申请日：1986-05-19

申请人： Richard H. Rubin ,  Benjamin J. Petrone ,  Richard C. Heim ,  Scott M. Pawenski

发明人： Richard H. Rubin ,  Benjamin J. Petrone ,  Richard C. Heim ,  Scott M. Pawenski

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/30 ,  H01L21/677 ,  C23C14/00

CPC分类号： H01L21/67748 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/67196 ,  Y10S414/137 ,  Y10S414/139

摘要： A self-contained modular processing apparatus is disclosed for processing workpieces, and in particular, silicon wafers. The apparatus is constructed of framed modules which plug into a service facility docking subassembly and interlock therewith to make up a complete modular processing system for wafer processing. Each module may be provided with its own wafer transporting mechanism and includes a built-in CPU such that each module is an independent, stand-alone processing unit. Each processing unit, by being capable of independent operation, functions as a building block to configure a modular processing system capable of handling wafer flow in multiple directions while performing a multitude of processing functions or operations. Individual modules are arranged along a line of single fold symmetry such that a single transport mechanism may be employed for transferring wafers among adjacent modules.

摘要翻译： 公开了一种独立的模块化处理装置，用于处理工件，特别是硅晶片。 该装置由框架模块构成，该框架模块插入服务设施对接子组件并与之互锁，构成用于晶片处理的完整的模块化处理系统。 每个模块可以设置有其自己的晶片传送机构，并且包括内置CPU，使得每个模块是独立的独立处理单元。 每个处理单元通过独立操作能够起到构建模块的作用，以配置能够处理多个处理功能或操作的多个方向上的晶片流的模块化处理系统。 单个模块沿着单折叠对称线布置，使得单个传送机构可用于在相邻模块之间传送晶片。

公开(公告)号：US06391804B1

公开(公告)日：2002-05-21

申请号：US09590824

申请日：2000-06-09

申请人： Robert W. Grant ,  Benjamin J. Petrone ,  Ronald F. Klopp ,  Theodore E. Farley ,  Paul D. Mumbauer

发明人： Robert W. Grant ,  Benjamin J. Petrone ,  Ronald F. Klopp ,  Theodore E. Farley ,  Paul D. Mumbauer

IPC分类号： H01L21324

CPC分类号： H01L21/67115 ,  H01L21/67109

摘要： Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor where uniformity of temperature across the width and breadth of a semiconductor wafer is achieved by placement of a dome-shaped thermal insert in close proximity to a semiconductor wafer in process. Thermal energy is absorbed by the thermal insert from the semiconductor wafer at a high rate where the spacing between the thermal insert and semiconductor wafer is at a minimum and at a gradually reduced rate where the spacing between the thermal insert and semiconductor wafer is gradually increased. A guard ring is also incorporated to negate bottom side reflective thermal energy exposure.

摘要翻译： 在快速热处理反应器中用于均匀直接辐射加热的方法和装置，其中半导体晶片的宽度和宽度上的温度均匀度通过将半圆形热插入件放置在非常接近半导体晶片的过程中来实现。 热能被热插入物从半导体晶片以高速率吸收，其中热插入物和半导体晶片之间的间隔处于最小并且逐渐降低的速率，其中热插入物和半导体晶片之间的间隔逐渐增加。 还结合了保护环以抵消底部反射热能暴露。

公开(公告)号：US07771563B2

公开(公告)日：2010-08-10

申请号：US10991554

申请日：2004-11-18

申请人： Robert W. Grant ,  Benjamin J. Petrone ,  Paul D. Mumbauer

发明人： Robert W. Grant ,  Benjamin J. Petrone ,  Paul D. Mumbauer

IPC分类号： H01L21/306 ,  C03C25/68

CPC分类号： H01L21/6719 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67303 ,  H01L21/67306 ,  H01L21/6732 ,  H01L21/67323 ,  H01L21/67748 ,  H01L21/67757 ,  H01L21/67781

摘要： A system and method for processing substrates that achieves isothermal and uniform fluid flow processing conditions for a plurality of substrates. In one aspect, the invention is a system and method that utilizes matching the emissivity value of the surfaces of a process chamber that oppose exposed surfaces of the substrates with the emissivity value of the exposed surfaces to achieve isothermal conditions throughout a substrate stack. In another aspect, the invention is system and method of processing substrates in a process chamber that exhibits excellent fluid flow uniformity by eliminating cavities or geometrical irregularities in the process chamber profile due to substrate loading openings. In yet anther aspect, the invention is a system and method of processing substrates wherein the process chamber comprises a liner and a shell, the liner constructed of a highly thermally conductive material, such as carbon, and the shell is constructed of a non-porous material, such as stainless steel.

摘要翻译： 一种用于处理实现多个基板的等温且均匀的流体流动处理条件的基板的系统和方法。 在一个方面，本发明是一种系统和方法，利用将处理室的与基板的暴露表面相对的表面的发射率与暴露表面的发射率值相匹配来实现整个衬底叠层的等温条件。 在另一方面，本发明是在处理室中处理衬底的系统和方法，其通过消除由于衬底加载开口而导致的处理室轮廓中的空腔或几何不规则性而显示出优异的流体流动均匀性。 在另一方面，本发明是一种处理衬底的系统和方法，其中处理室包括衬套和壳体，衬套由高导热性材料（例如碳）构成，壳体由无孔 材质，如不锈钢。

公开(公告)号：US06428847B1

公开(公告)日：2002-08-06

申请号：US09688555

申请日：2000-10-16

申请人： Robert W. Grant ,  Benjamin J. Petrone ,  Matthew D. Brubaker ,  Paul D. Mumbauer

发明人： Robert W. Grant ,  Benjamin J. Petrone ,  Matthew D. Brubaker ,  Paul D. Mumbauer

IPC分类号： C23C1600

CPC分类号： C23C16/45502 ,  C23C16/455 ,  C23C16/45563 ,  C30B25/14

摘要： Chemical vapor deposition reactor incorporating gas flow vortex formation for uniform chemical vapor deposition upon a stationary wafer substrate. Gas flow including chemical vapors is introduced in tangential fashion to the interior of the heated reactor to provide for suitable uniform boundary layer control within the reactor upon the stationary wafer substrate.

摘要翻译： 包含气流涡流形成的化学气相沉积反应器，用于在固定晶片衬底上进行均匀的化学气相沉积。 包括化学蒸气的气流以切向的方式引入加热的反应器的内部，以在反应器内在固定晶片衬底上提供合适的均匀边界层控制。