摘要:
Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor where uniformity of temperature across the width and breadth of a semiconductor wafer is achieved by placement of a dome-shaped thermal insert in close proximity to a semiconductor wafer in process. Thermal energy is absorbed by the thermal insert from the semiconductor wafer at a high rate where the spacing between the thermal insert and semiconductor wafer is at a minimum and at a gradually reduced rate where the spacing between the thermal insert and semiconductor wafer is gradually increased. A guard ring is also incorporated to negate bottom side reflective thermal energy exposure.
摘要:
A system and method for processing substrates that achieves isothermal and uniform fluid flow processing conditions for a plurality of substrates. In one aspect, the invention is a system and method that utilizes matching the emissivity value of the surfaces of a process chamber that oppose exposed surfaces of the substrates with the emissivity value of the exposed surfaces to achieve isothermal conditions throughout a substrate stack. In another aspect, the invention is system and method of processing substrates in a process chamber that exhibits excellent fluid flow uniformity by eliminating cavities or geometrical irregularities in the process chamber profile due to substrate loading openings. In yet anther aspect, the invention is a system and method of processing substrates wherein the process chamber comprises a liner and a shell, the liner constructed of a highly thermally conductive material, such as carbon, and the shell is constructed of a non-porous material, such as stainless steel.
摘要:
Chemical vapor deposition reactor incorporating gas flow vortex formation for uniform chemical vapor deposition upon a stationary wafer substrate. Gas flow including chemical vapors is introduced in tangential fashion to the interior of the heated reactor to provide for suitable uniform boundary layer control within the reactor upon the stationary wafer substrate.
摘要:
A single substrate high frequency sonic processing module uses a substrate chamber dimensionally sized to the substrate for immersing the substrate in processing solution. Sonic wave permeable membranes form two ends of the substrate chamber along a sonic wave path therethrough. A sonic wave generated by a transducer external to the substrate chamber, travels through sonic wave conducting liquid in contact with the first membrane, external to the substrate chamber. The liquid is shaped by a sonic wave guide of continuously diminishing cross sectional area along the sonic wave path therethrough, thus intensifying and concentrating the sonic wave entering the substrate chamber. The sonic wave passes through the second membrane to a sonic absorbing and dissipating ante chamber. A method for sonic processing of substrates is disclosed. The individual sonic processing modules are combined into a single system for simultaneously processing plural substrates. The minimal sized substrate chamber provides effective processing with minimal processing solution, minimizing cost and disposal. The shaped wave guide concentrates and intensifies the sonic wave guide to provide enhanced processing.
摘要:
A cover for a fluid processing chamber is formed of a resilient, heat and chemical resistant laminate of at least three layers. The first layer is a Teflon sheath, the second layer is a blanket heater, and the third layer is a plurality of thin sheets of silicone rubber. The laminate is formed by vacuum formation of the Teflon sheath onto the blanket heater which is supported by the silicone rubber. The opening to the chamber is formed with a rigid lip. The laminate is contained in a stainless steel housing which has an opening therein sized to encompass the perimeter of the chamber lip. Pressure on the cover housing achieves a fluid tight seal with the chamber. No fluid seeps between the cover and the lip even when processing requiring vigorous fluid agitation is carried out in the sealed chamber.
摘要:
This method enables the use of nanowire or nano-textured forms of Polyaniline and other conductive polymers in energy storage components. The delicate nature of these very high surface area materials are preserved during the continuous electrochemical synthesis, drying, solvent application and physical assembly. The invention also relates to a negative electrode that is comprised of etched, lithiated aluminum that is safer and lighter weight than conventional carbon based lithium-ion negative electrodes. The invention provides for improved methods for making negative and positive electrodes and for energy storage devices containing them. The invention provides sufficient stability in organic solvent and electrolyte solutions, where the prior art processes commonly fail. The invention further provides stability during repetitive charge and discharge. The invention also provides for novel microstructure protecting support membranes to be used in an energy storage device.
摘要:
This method enables the use of nanowire or nano-textured forms of Polyaniline and other conductive polymers in energy storage components. The delicate nature of these very high surface area materials are preserved during the continuous electrochemical synthesis, drying, solvent application and physical assembly. The invention also relates to a negative electrode that is comprised of etched, lithiated aluminum that is safer and lighter weight than conventional carbon based lithium-ion negative electrodes. The invention provides for improved methods for making negative and positive electrodes and for energy storage devices containing them. The invention provides sufficient stability in organic solvent and electrolyte solutions, where the prior art processes commonly fail. The invention further provides stability during repetitive charge and discharge. The invention also provides for novel microstructure protecting support membranes to be used in an energy storage device.
摘要:
A mass flow controller controls the delivery of a precursor to a mist generator. The precursor is misted utilizing a venturi in which a combination of oxygen and nitrogen gas is charged by a corona wire and passes over a precursor-filled throat. The mist is refined using a particle inertial separator, electrically filtered so that it comprises predominantly negative ions, passes into a velocity reduction chamber, and then flows into a deposition chamber through inlet ports in an inlet plate that is both a partition between the chambers and a grounded electrode. The inlet plate is located above and substantially parallel to the plane of the substrate on which the mist is to be deposited. The substrate is positively charged to a voltage of about 5000 volts. There are 440 inlet ports per square inch in an 39 square inch inlet port area of the inlet plate directly above the substrate. The inlet port area is approximately equal to the substrate area. An exhaust port defines a channel about the periphery of an exhaust plane parallel to and below the substrate plane.
摘要:
A bung connection for a rigid container has a bung body which threads into the bung opening, and has a base wall with two or more access openings which are connected to tubes extending to the flowable material in the container. A tube mounting is removably inserted into the bung body and has flow ports which connect with the access ports in the base wall. Flow tubes connect to the tube mounting. The tube mounting and bung body have a coded pattern of interfitting lugs and recesses which prevent full assembly of the tube mounting and bung body if the coding is wrong. A clamp ring secures the tube mounting in the bung body. A shipping plug and liner replace the tube mounting in the bung body for shipping the container to be refilled and then returned for use again.
摘要:
A process for coating of at least one conformal thin film simultaneously onto the surface of a plurality or batch of substrates having nanoscaled features is provided. The process involves exposing a batch of substrates to a supercritical fluid mixture in a controlled environment, and subsequently heating and cooling the substrate, in the presence of the supercritical fluid mixture, beyond a threshold temperature at which film growth can be enabled to initiate conformal thin film deposition on the surface of the substrate and within the nanoscaled features. The supercritical fluid mixture may be generated in a manner so as to maintain a necessary concentration level of the precursor material to permit sufficient thin film growth within the controlled environment. The supercritical fluid mixture may also be introduced into the controlled environment in a manner which minimizes precipitation or loss of solubility of the precursor material in the mixture. A system of thin film deposition of a batch of substrates is also provided.