公开(公告)号：US07128986B2

公开(公告)日：2006-10-31

申请号：US10686841

申请日：2003-10-16

申请人： Robert W. Lamberton ,  Declan Macken ,  Paul M. Dodd ,  William J. O'Kane

发明人： Robert W. Lamberton ,  Declan Macken ,  Paul M. Dodd ,  William J. O'Kane

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  G11B5/1274 ,  G11B5/1278 ,  G11B5/133 ,  G11B5/187 ,  G11B5/313 ,  G11B5/74 ,  G11B2005/0029 ,  H01F10/007 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/256 ,  Y10T428/32

摘要： The present invention includes magnetic write elements with portions formed a nanophase high magnetic moment material to enable further increases in areal density in magnetic recording. The nanophase deposited high magnetic moment material comprises coated nanoclusters and nanolaminated cluster films that are deposited to form nanophase high magnetic moment material portions of a write pole and SUL layer in perpendicular recording media. The nanophase write poles exhibit high magnetic moments and are generally compatible with conventional writer head fabrication techniques.

摘要翻译： 本发明包括具有形成纳米相高磁矩材料的部分的磁写入元件，以使磁记录中的面密度进一步增加。 纳米相沉积的高磁矩材料包括沉积以在垂直记录介质中形成写极和SUL层的纳米相高磁矩材料部分的包覆的纳米团簇和纳米聚酰胺簇膜。 纳米相位写磁极表现出高的磁矩，并且通常与传统的写入头制造技术兼容。

公开(公告)号：US07099122B2

公开(公告)日：2006-08-29

申请号：US10737579

申请日：2003-12-16

申请人： Ge Yi ,  Robert W. Lamberton ,  Susan Jane Tara Murdoch ,  Thomas K. McLaughlin ,  William J. O'Kane

发明人： Ge Yi ,  Robert W. Lamberton ,  Susan Jane Tara Murdoch ,  Thomas K. McLaughlin ,  William J. O'Kane

IPC分类号： G11B5/39

CPC分类号： B82Y10/00 ,  G11B5/39

摘要： A spin polarization enhancement artificial (SPEA) magnet comprises combinations of positive spin asymmetry interfaces and inverse spin asymmetry interfaces arranged antiferromagnetically such that current passed through the SPEA magnet has enhanced spin polarization. The SPEA magnet additionally may combine bulk material properties of electron scattering to either supplement or replace the interfacial spin differentiation. A basic functional unit of the SPEA magnet includes two ferromagnetic layers separated by two spacer layers. Each spacer forms an interface such that adjacent ferromagnetic layers produce different spin symmetry. Antiferromagnetic arrangement of adjacent ferromagnetic layers coordinates the different spin symmetries such that a single spin state is selected and also provides additional stabilization to the SPEA magnet.

摘要翻译： 自旋极化增强人造（SPEA）磁体包括正自旋不对称界面和反向自旋非对称界面的组合，其反铁磁性布置，使得通过SPEA磁体的电流具有增强的自旋极化。 SPEA磁体另外可以将散射材料的电子散射特性与补充或替代界面旋转分化结合起来。 SPEA磁体的基本功能单元包括由两个间隔层隔开的两个铁磁层。 每个间隔物形成界面，使得相邻的铁磁层产生不同的自旋对称性。 相邻铁磁层的反铁磁布置协调不同的自旋对称性，使得选择单个自旋状态并且还为SPEA磁体提供额外的稳定性。

公开(公告)号：US5946169A

公开(公告)日：1999-08-31

申请号：US949948

申请日：1997-10-13

申请人： William J. O'Kane ,  Gregory S. Mowry ,  Todd G. Backer ,  Herman C. Kluge

发明人： William J. O'Kane ,  Gregory S. Mowry ,  Todd G. Backer ,  Herman C. Kluge

IPC分类号： G01R33/09 ,  G11B5/39

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/399

摘要： A soft adjacent layer (SAL) vertically biased magnetoresistive (MR) sensor is disclosed. The SAL biased sensor includes at least three permanent magnet (PM) tabs (hereafter referred to as tabs). An MR sensor layer is disposed in relation to the tabs such that each of the tabs is spaced apart along a width of the MR sensor layer such that each of the tabs is in electrical and magnetic contact with the MR sensor layer to thereby stabilize the MR sensor layer. Preferably, a SAL is disposed in relation to the tabs such that each of the tabs is also spaced apart along a width of the SAL such that each of the tabs is in electrical and magnetic contact with the SAL. A spacer layer is formed between the MR sensor layer and the SAL.

摘要翻译： 公开了一种软相邻层（SAL）垂直偏置磁阻（MR）传感器。 SAL偏置传感器包括至少三个永磁体（PM）接头（以下称为接头）。 相对于突片设置MR传感器层，使得每个突片沿着MR传感器层的宽度间隔开，使得每个突片与MR传感器层电气和磁性接触，从而稳定MR 传感器层。 优选地，相对于突片设置SAL，使得每个突片也沿着SAL的宽度间隔开，使得每个突片与SAL电磁接触。 间隔层形成在MR传感器层和SAL之间。

公开(公告)号：US07233457B2

公开(公告)日：2007-06-19

申请号：US10737491

申请日：2003-12-16

申请人： Alan B. Johnston ,  Mark A. Gubbins ,  William J. O'Kane

发明人： Alan B. Johnston ,  Mark A. Gubbins ,  William J. O'Kane

IPC分类号： G11B5/127

CPC分类号： G11B5/315 ,  G11B5/1278

摘要： A perpendicular writer of the present invention comprises a main pole connected to two return poles and further includes one or more shorting shields thereby reducing erasure field on double layer perpendicular media. The perpendicular writer may include side shorting shields connecting the first and second return poles thereby modifying the crosstrack field gradient. Additionally, the perpendicular writer may include a top shorting shield modifying the downtrack gradient and may additionally include a bottom shorting shield for further reduction of erasure fields. The distance between the main pole and the shorting shields may be modified to customize the write field gradient.

摘要翻译： 本发明的垂直写入器包括连接到两个返回极的主极，并且还包括一个或多个短路屏蔽，从而减少双层垂直介质上的擦除场。 垂直写入器可以包括连接第一和第二返回极的侧面短路屏蔽，从而修改交叉领域梯度。 此外，垂直写入器可以包括修改倾斜梯度的顶部短路屏蔽，并且还可以包括用于进一步减少擦除磁场的底部短路屏蔽。 可以修改主极和短路罩之间的距离，以定制写场梯度。