专利检索 ap:("Rohm AND Haas Electronic Materials CMP Holdings, Inc.") AND inv:"Li Zhang" 第 1 页

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发明申请
CHEMICAL MECHANICAL POLISHING COMPOSITION AND METHOD 有权

公开(公告)号：US20220348790A1

公开(公告)日：2022-11-03

申请号：US17697709

申请日：2022-03-17

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Changzai Chi , Kwadwo Tettey , Matthew Richard Van Hanehem , Murali Ganth Theivanayagam , Li Zhang , David Wayne Mosley

IPC分类号： C09G1/02 , C08K3/36 , C08K9/06

摘要： Chemical mechanical polishing compositions include modified silanized colloidal silica particles which are reaction products of silanized colloidal silica particles having epoxy moieties with nitrogen of amines to form stable and tunable modified silanized colloidal silica particles. The modified silanized colloidal silica particles can be used as an abrasive in chemical mechanical polishing of various substrates to polish metal such as copper, Ta and TaN and dielectrics such as TEOS and low-K film.