公开(公告)号：US06238739B1

公开(公告)日：2001-05-29

申请号：US09125968

申请日：1999-02-02

申请人： Roland Madar ,  Alain Rouault ,  Elisabeth Blanquet ,  Claude Bernard ,  Anne-Marie Dutron

发明人： Roland Madar ,  Alain Rouault ,  Elisabeth Blanquet ,  Claude Bernard ,  Anne-Marie Dutron

IPC分类号： C23C1608

CPC分类号： C23C16/4488 ,  C23C16/34

摘要： A method for forming a Ti1-xAlxN coating on a part without plasma enhancement, wherein a chemical vapor deposition chamber is heated to 250-500° C.; the part to be coated is heated to 550-650° C. and placed in said chamber; and a mixture of titanium and aluminium chlorides, NH3 and H2 is injected into the chamber. The molar amount of NH3 is greater than the molar amount of chlorides, and the molar amount of hydrogen is over five times greater than the molar amount of chlorides.

摘要翻译： 在没有等离子体增强的部分上形成Ti1-xAlxN涂层的方法，其中将化学气相沉积室加热至250-500℃; 将待涂覆的部分加热至550-650℃并放置在所述室中; 并将钛和氯化铝的混合物NH 3和H 2注入室中。 NH 3的摩尔量大于氯化物的摩尔量，氢的摩尔量比氯化物的摩尔量高五倍以上。

公开(公告)号：US06218319B1

公开(公告)日：2001-04-17

申请号：US09362979

申请日：1999-07-28

申请人： Anne-Marie Dutron ,  Patrick Raffin

发明人： Anne-Marie Dutron ,  Patrick Raffin

IPC分类号： H01L2131

CPC分类号： H01L27/10861 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/31604 ,  H01L21/31625 ,  H01L21/763

摘要： The method of the present invention is directed to the formation of an arsenic silicon glass (ASG) film onto a silicon structure and finds a valuable application in the buried plate region formation process in the manufacture of deep trench cell capacitors in EDO and SDRAM memory chips. The starting structure is state-of-the-art and consists of a silicon substrate coated by a patterned SiO2/Si3N4 pad layer which defines deep trenches formed therein by etching. At the beginning of the conventional buried plate region formation, the interior side walls of deep trenches are coated with an arsenic doped silicon glass (ASG) film resulting from the co-pyrolysis of TEOS and TEASAT in a vertical hot dual wall LPCVD reactor as standard. According to the present invention, a flow of O2 is added which makes this co-pyrolysis of TEOS and TEASAT no longer interactive. As a consequence, the improved process is much better controlled than the conventional one. The ASG film is conformally deposited onto the structure with a high degree of thickness and arsenic concentration uniformity within a same wafer and from wafer to wafer of the lot.

摘要翻译： 本发明的方法涉及在硅结构上形成砷硅玻璃（ASG）膜，并且在EDO和SDRAM存储芯片中制造深沟槽电池电容器的掩埋板区域形成过程中发现了有价值的应用 。 起始结构是最先进的，并且由通过蚀刻形成在其中形成深沟槽的图案化SiO 2 / Si 3 N 4衬垫层涂覆的硅衬底组成。 在常规掩埋板区域形成的开始，深沟槽的内侧壁涂覆有由标准的垂直热双壁LPCVD反应器中的TEOS和TEASAT的共热解产生的砷掺杂硅玻璃（ASG）膜 。 根据本发明，加入了O 2的流动，这使得TEOS和TEASAT的这种共热解不再具有交互作用。 因此，改进的方法比常规方法得到更好的控制。 ASG膜在相同的晶片内以及从批次的晶片到晶片之间的厚度和砷浓度均匀性保形地沉积在结构上。