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    Formation of single-crystal silicon carbide
    3.
    发明申请
    Formation of single-crystal silicon carbide 失效
    形成单晶碳化硅

    公开(公告)号：US20050257734A1

    公开(公告)日：2005-11-24

    申请号：US10514159

    申请日：2003-05-15

    申请人： Roland Madar ,  Michel Pons ,  Francis Baillet ,  Lucovic Charpentier ,  Etienne Pernot ,  Didier Chaussende ,  Daniel Turover

    发明人： Roland Madar ,  Michel Pons ,  Francis Baillet ,  Lucovic Charpentier ,  Etienne Pernot ,  Didier Chaussende ,  Daniel Turover

    IPC分类号： C30B23/00 ,  C30B23/02 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14 ,  C23C16/00

    CPC分类号： C30B23/005 ,  C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  Y10T117/10 ,  Y10T117/1008

    摘要： The invention concerns a device (10) for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber (20) containing a substrate (42) whereat is formed a polycrystalline source of said body and a monocrystalline germ (46) of said body; a second chamber (14), said substrate being arranged between the two chambers; means for input (36) of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means (26) for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.

    摘要翻译： 本发明涉及一种用于以单晶状态形成具有不一致蒸发的化合物，其能够是单晶或多晶形式的装置（10），其包括至少一个第一室（20），所述第一室包含衬底（42），所述第一室 所述体的多晶体源和所述体的单晶细菌（46）; 第二室（14），所述衬底布置在所述两个室之间; 用于将所述主体的气体前体输入（36）到所述第二室中的装置，其能够使所述主体以多晶形式沉积在所述基板上; 以及加热装置（26），用于将基材保持在高于胚芽温度的温度下，以便以单晶形式引起多晶体源的升华和沉积在所述主体的胚芽上。

    Non-plasma CVD method and apparatus of forming Ti1-xA1xN coatings
    4.
    发明授权
    Non-plasma CVD method and apparatus of forming Ti1-xA1xN coatings 有权
    非等离子体CVD方法和形成Ti1-xAlxN涂层的装置

    公开(公告)号：US06238739B1

    公开(公告)日：2001-05-29

    申请号：US09125968

    申请日：1999-02-02

    申请人： Roland Madar ,  Alain Rouault ,  Elisabeth Blanquet ,  Claude Bernard ,  Anne-Marie Dutron

    发明人： Roland Madar ,  Alain Rouault ,  Elisabeth Blanquet ,  Claude Bernard ,  Anne-Marie Dutron

    IPC分类号： C23C1608

    CPC分类号： C23C16/4488 ,  C23C16/34

    摘要： A method for forming a Ti1-xAlxN coating on a part without plasma enhancement, wherein a chemical vapor deposition chamber is heated to 250-500° C.; the part to be coated is heated to 550-650° C. and placed in said chamber; and a mixture of titanium and aluminium chlorides, NH3 and H2 is injected into the chamber. The molar amount of NH3 is greater than the molar amount of chlorides, and the molar amount of hydrogen is over five times greater than the molar amount of chlorides.

    摘要翻译： 在没有等离子体增强的部分上形成Ti1-xAlxN涂层的方法，其中将化学气相沉积室加热至250-500℃; 将待涂覆的部分加热至550-650℃并放置在所述室中; 并将钛和氯化铝的混合物NH 3和H 2注入室中。 NH 3的摩尔量大于氯化物的摩尔量，氢的摩尔量比氯化物的摩尔量高五倍以上。

    Selective deposition process of a refractory metal silicide onto silicon areas
    6.
    发明授权
    Selective deposition process of a refractory metal silicide onto silicon areas 失效
    难熔金属硅化物在硅区域的选择性沉积工艺

    公开(公告)号：US4871691A

    公开(公告)日：1989-10-03

    申请号：US269754

    申请日：1988-11-08

    申请人： Joaquim Torres ,  Roland Madar ,  Claude Bernard ,  Jean-Francois Million-Brodaz

    发明人： Joaquim Torres ,  Roland Madar ,  Claude Bernard ,  Jean-Francois Million-Brodaz

    IPC分类号： C23C16/42 ,  H01L21/285 ,  H01L21/768

    CPC分类号： C23C16/42 ,  H01L21/28518 ,  H01L21/76879 ,  Y10S148/147

    摘要： A selective deposition process of a refractory metal silicide onto the silicon apparent surfaces of a wafer partially coated with SiO.sub.2, comprising the following steps: flowing in a cold-wall airtight chamber comprising said wafer a gaseous silane composite at a partial pressure P.sub.Si.sbsb.x.sub.H.sbsb.y and an halogenide of said metal at a partial pressure P.sub.Me ; heating the wafer to a first temperature (T1) for a first duration (t1), P.sub.Si.sbsb.x.sub.H.sbsb.y and P.sub.Me being chosen so as to allow a metal silicide deposition to be formed on the wafer, the silicon being overstoichiometric; and, heating the wafer to a second temperature (T2) lower than the first one for a second duration (t2), T2 being chosen as a function of P.sub.Si.sbsb.x.sub.H.sbsb.y and P.sub.Me so as to allow a stoichiometric metal silicide deposition to be formed on the wafer.

    摘要翻译： 将难熔金属硅化物选择性地沉积到部分涂覆有SiO 2的晶片的硅表观表面上，包括以下步骤：在分压PSixHy和卤化物的气体硅烷复合材料中将包含所述晶片的冷壁气密室流动 的所述金属在分压PMe下; 将晶片加热到第一温度（T1）持续第一持续时间（t1），选择PSixHy和PMe以便在晶片上形成金属硅化物沉积，硅是过度化学计量的; 并且将晶片加热到低于第一温度（T2）的第二温度（T2）持续第二持续时间（t2），选择T2作为PSixHy和PMe的函数，以便允许在晶片上形成化学计量的金属硅化物沉积 。

    Creation of an electrically conducting bonding between two semi-conductor elements
    8.
    发明授权
    Creation of an electrically conducting bonding between two semi-conductor elements 有权
    在两个半导体元件之间形成导电接合

    公开(公告)号：US07208392B1

    公开(公告)日：2007-04-24

    申请号：US10069517

    申请日：2000-09-07

    申请人： Claude Jaussaud ,  Eric Jalaguier ,  Roland Madar

    发明人： Claude Jaussaud ,  Eric Jalaguier ,  Roland Madar

    IPC分类号： H01L21/30

    CPC分类号： H01L21/7602 ,  H01L21/0445 ,  H01L21/185

    摘要： A method of creating an electrically conducting bonding between a face of a first semiconductor element and a face of a second semiconductor element using heat treatment. The method applies the faces one against the other with the placing between them of at least one layer of a material configured to provide, after heat treatment, an electrically conducting bonding between the two faces. The deposited layers are chosen so that the heat treatment does not induce any reaction product between said material and the semi-conductor elements. Then, a heat treatment is carried out.

    摘要翻译： 一种使用热处理在第一半导体元件的表面和第二半导体元件的表面之间产生导电接合的方法。 该方法将面彼此贴靠在至少一层材料之间的位置之间，该层被配置为在热处理之后提供两个面之间的导电结合。 选择沉积层，使得热处理不会在所述材料和半导体元件之间引起任何反应产物。 然后进行热处理。

    Method and device for introducing precursors into chamber for chemical vapor deposition
    9.
    发明授权
    Method and device for introducing precursors into chamber for chemical vapor deposition 失效
    将前体引入化学气相沉积室的方法和装置

    公开(公告)号：US5945162A

    公开(公告)日：1999-08-31

    申请号：US583090

    申请日：1996-06-17

    申请人： Jean-Pierre Senateur ,  Roland Madar ,  Francois Weiss ,  Olivier Thomas ,  Adulfas Abrutis

    发明人： Jean-Pierre Senateur ,  Roland Madar ,  Francois Weiss ,  Olivier Thomas ,  Adulfas Abrutis

    IPC分类号： B01D1/18 ,  C23C16/448 ,  C23C16/00

    CPC分类号： B01D1/18 ,  C23C16/4486

    摘要： A method is disclosed for introducing into a chemical vapor deposition chamber precursors of elements to be deposited over a heated substrate. The method comprises the steps of maintaining one or more precursors in liquid form or in solution at a pressure higher than the pressure of the chamber; injecting periodically and under control in the deposition chamber precursor droplets each of the droplets having a controllable volume; volatizing the injected precursor droplets to produce evaporated precursors, and conveying toward the substrate the evaporated precursors at a temperature and pressure of the chamber, whereby the evaporated precursors react to produce the elements deposited onto the substrate. A device for performing the same is also disclosed and includes at least one tank containing precursors in liquid form or in solution; means for maintaining each tank at a pressure higher than the pressure of the chamber; at least one controlled injector associated with each tank and provided with control means for periodically injecting controlled amounts of precursor droplets into the deposition chamber; means for volatizing said injected precursor droplets to produce evaporated precursors, and means for conveying the evaporated precursors to the substrate disposed in the deposition chamber.

    摘要翻译： PCT No.PCT / FR94 / 00858 Sec。 371日期1996年6月17日第 102（e）日期1996年6月17日PCT提交1994年7月8日PCT公布。 第WO95 / 02711号公报 日期1995年1月26日公开了一种用于将待沉积在加热衬底上的元件的化学气相沉积室引入的方法。 该方法包括以高于室压力的压力将一种或多种前体保持在液体形式或溶液中的步骤; 在沉积室前体中周期性地和在控制下注入，每个液滴具有可控制的体积; 挥发注入的前体液滴以产生蒸发的前体，以及在室的温度和压力下朝向基底输送蒸发的前体，由此蒸发的前体反应以产生沉积在基底上的元素。 还公开了用于执行该装置的装置，并且包括至少一个容纳液体形式或溶液中的前体的罐; 用于将每个罐保持在高于室的压力的压力的装置; 与每个罐相关联的至少一个受控喷射器，并设置有控制装置，用于将受控数量的前体液滴周期性地注入到沉积室中; 用于挥发所述注射的前体液滴以产生蒸发的前体的装置，以及用于将蒸发的前体输送到设置在沉积室中的基材的装置。

    Formation of single-crystal silicon carbide
    10.
    发明授权
    Formation of single-crystal silicon carbide 失效
    形成单晶碳化硅

    公开(公告)号：US07655091B2

    公开(公告)日：2010-02-02

    申请号：US10514159

    申请日：2003-05-15

    申请人： Roland Madar ,  Michel Pons ,  Francis Baillet ,  Ludovic Charpentier ,  Etienne Pernot ,  Didier Chaussende ,  Daniel Turover

    发明人： Roland Madar ,  Michel Pons ,  Francis Baillet ,  Ludovic Charpentier ,  Etienne Pernot ,  Didier Chaussende ,  Daniel Turover

    IPC分类号： C30B15/30 ,  C23C16/00

    CPC分类号： C30B23/005 ,  C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  Y10T117/10 ,  Y10T117/1008

    摘要： The invention concerns a device (10) for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber (20) containing a substrate (42) whereat is formed a polycrystalline source of said body and a monocrystalline germ (46) of said body; a second chamber (14), said substrate being arranged between the two chambers; means for input (36) of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means (26) for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.

    摘要翻译： 本发明涉及一种用于以单晶状态形成具有不一致蒸发的化合物，其能够是单晶或多晶形式的装置（10），其包括至少一个第一室（20），所述第一室包含衬底（42），所述第一室 所述体的多晶体源和所述体的单晶细菌（46）; 第二室（14），所述衬底布置在所述两个室之间; 用于将所述主体的气体前体输入（36）到所述第二室中的装置，其能够使所述主体以多晶形式沉积在所述基板上; 以及加热装置（26），用于将基材保持在高于胚芽温度的温度下，以便以单晶形式引起多晶体源的升华和沉积在所述主体的胚芽上。