公开(公告)号：US20120248515A1

公开(公告)日：2012-10-04

申请号：US13494769

申请日：2012-06-12

申请人： Ru-Shang HSIAO ,  Nai-Wen CHENG ,  Chung-Te LIN ,  Chien-Hsien TSENG ,  Shou-Gwo WUU

发明人： Ru-Shang HSIAO ,  Nai-Wen CHENG ,  Chung-Te LIN ,  Chien-Hsien TSENG ,  Shou-Gwo WUU

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L21/324 ,  H01L21/823878 ,  H01L22/34 ,  H01L27/14689 ,  H01L29/7842

摘要： This disclosure relates to an active pixel cell including a shallow trench isolation (STI) structure. The active pixel cell further includes a photodiode neighboring the STI structure, where a first stress resulted from substrate processing prior to deposition of a pre-metal dielectric layer increases dark current and white cell counts of a photodiode of the active pixel cell. The active pixel cell further includes a transistor, where the transistor controls the operation of the active pixel cell. The active pixel cell further includes a stress layer over the photodiode, the STI structure, and the transistor, and the stress layer has a second stress that counters the first stress exerted on the substrate, and the second stress reduces the dark current and the white cell counts caused by the first stress.

摘要翻译： 本公开涉及包括浅沟槽隔离（STI）结构的有源像素单元。 有源像素单元还包括与STI结构相邻的光电二极管，其中在沉积预金属介电层之前由衬底处理产生的第一应力增加了有源像素单元的光电二极管的暗电流和白细胞计数。 有源像素单元还包括晶体管，其中晶体管控制有源像素单元的操作。 有源像素单元还包括光电二极管上的应力层，STI结构和晶体管，并且应力层具有对施加在衬底上的第一应力进行反映的第二应力，并且第二应力减小暗电流和白色 细胞计数由第一次压力引起。

公开(公告)号：US20110260223A1

公开(公告)日：2011-10-27

申请号：US12768063

申请日：2010-04-27

申请人： Ru-Shang HSIAO ,  Nai-Wen CHENG ,  Chung-Te LIN ,  Chien-Hsien TSENG ,  Shou-Gwo WUU

发明人： Ru-Shang HSIAO ,  Nai-Wen CHENG ,  Chung-Te LIN ,  Chien-Hsien TSENG ,  Shou-Gwo WUU

IPC分类号： H01L27/146 ,  H01L21/31 ,  H01L21/66

CPC分类号： H01L27/1463 ,  H01L21/324 ,  H01L21/823878 ,  H01L22/34 ,  H01L27/14689 ,  H01L29/7842

摘要： The active pixel cell structures and methods of preparing such structures described above enable reduction of dark current and white cell counts for active pixel cells. The process of preparing active pixel cell structures introduces stress on the substrate, which could lead to increased dark current and white cell counts of active pixel cells. By depositing a stress layer as part of a pre-metal dielectric layer with a stress that counters the stress induced, both the dark current and the white cell counts can be reduced. If the transistors of the active pixel cells are NMOS, the carrier mobility can also be increased by a tensile stress layer. Raman Spectroscopy can be used to measure the stress exerted on the substrate prior to the deposition of the stress layer.

摘要翻译： 上述有源像素单元结构和制备这种结构的方法能够减少有源像素单元的暗电流和白细胞计数。 制备有源像素单元结构的过程在衬底上引入应力，这可能导致有源像素单元的暗电流和白细胞计数增加。 通过沉积应力层作为预金属介电层的一部分，其应力引起应力，暗电流和白细胞计数都可以减小。 如果有源像素单元的晶体管是NMOS，则载流子迁移率也可以通过拉伸应力层增加。 拉曼光谱可用于测量在沉积应力层之前施加在基底上的应力。