公开(公告)号：US5132761A

公开(公告)日：1992-07-21

申请号：US593363

申请日：1990-10-01

申请人： Rudy L. York ,  Joseph D. Luttmer ,  Chang F. Wan ,  Thomas W. Orent ,  Larry D. Hutchins ,  Art Simmons

发明人： Rudy L. York ,  Joseph D. Luttmer ,  Chang F. Wan ,  Thomas W. Orent ,  Larry D. Hutchins ,  Art Simmons

IPC分类号： H01L31/10 ,  H01L27/14 ,  H01L31/113

CPC分类号： H01L31/113

摘要： Method of manufacturing an infrared detector having a refractory metal (16) within the metal-insulator-semiconductor structure (MIS) provides a process applicable for high volume production of infrared focal plane array detectors. The process of the present invention uses a refractory metal such as tantalum as the gate (16) which is less susceptible to the etching by the bromine solution used to etch the vias (22) as compared to aluminum. Additionally, the etching of the refractory metal film to form the MIS structure can be done with a fluorine-containing plasma, thus avoiding the corrosion of the metal associated with etching aluminum metal films in a chlorine-containing plasma.

公开(公告)号：US5188970A

公开(公告)日：1993-02-23

申请号：US865595

申请日：1992-04-09

申请人： Rudy L. York ,  Joseph D. Luttmer ,  Chang F. Wan ,  Thomas W. Orent ,  Larry D. Hutchins ,  Art Simmons

发明人： Rudy L. York ,  Joseph D. Luttmer ,  Chang F. Wan ,  Thomas W. Orent ,  Larry D. Hutchins ,  Art Simmons

IPC分类号： H01L31/113

CPC分类号： H01L31/113

摘要： Method of manufacturing an infrared detector having a refractory metal (16) within the metal-insulator-semiconductor structure (MIS) provides a process applicable for high volume production of infrared focal plane array detectors. The process of the present invention uses a refractory metal such as tantalum as the gate (16) which is less susceptible to the etching by the bromine solution used to etch the vias (22) as compared to aluminum. Additionally, the etching of the refractory metal film to form the MIS structure can be done with a fluorine-containing plasma, thus avoiding the corrosion of the metal associated with etching aluminum metal films in a chlorine-containing plasma.

摘要翻译： 在金属 - 绝缘体 - 半导体结构（MIS）内制造具有难熔金属（16）的红外检测器的方法提供了适用于大量生产红外焦平面阵列检测器的方法。 本发明的方法使用诸如钽的难熔金属作为栅极（16），与铝相比，其不利于用于蚀刻通孔（22）的溴溶液的蚀刻。 此外，可以用含氟等离子体进行难熔金属膜的蚀刻以形成MIS结构，从而避免与含氯等离子体中的蚀刻铝金属膜相关的金属的腐蚀。