公开(公告)号：US08570809B2

公开(公告)日：2013-10-29

申请号：US13340091

申请日：2011-12-29

申请人： Ryan T. Hirose ,  Bogdan Georgescu ,  Ashish Amonkar ,  Sean Mulholland ,  Vijay Raghavan ,  Cristinel Zonte

发明人： Ryan T. Hirose ,  Bogdan Georgescu ,  Ashish Amonkar ,  Sean Mulholland ,  Vijay Raghavan ,  Cristinel Zonte

IPC分类号： G11C16/04

CPC分类号： G11C16/0466 ,  G11C16/06 ,  G11C16/30 ,  G11C16/3418 ,  H01L29/792

摘要： Flash memory devices and systems are provided. One flash memory device includes an n-channel metal oxide semiconductor field-effect transistor (nMOSFET), a silicon-oxide-nitride-oxide silicon (SONOS) transistor coupled to the nMOSFET, and an isolated p-well coupled to the nMOSFET and the SONOS transistor. A flash memory system includes an array of memory devices divided into a plurality of paired sectors, a global bit line (GBL) configured to provide high voltage to each respective sector during erase and program operations coupled to each of the plurality of sectors, and a plurality of sense amplifiers coupled between a respective pair of sectors. Methods for operating a flash memory are also provided. One method includes providing high voltage, via the GBL, to the paired sectors during erase and program operations and providing low voltage, via a local bit line, to each memory device during read operations.

摘要翻译： 提供了闪存设备和系统。 一个闪速存储器件包括n沟道金属氧化物半导体场效应晶体管（nMOSFET），耦合到nMOSFET的氧化硅 - 氧化物 - 氧化物硅（SONOS）晶体管和耦合到nMOSFET的隔离p阱，以及 SONOS晶体管。 闪速存储器系统包括划分成多个成对扇区的存储器件阵列，全局位线（GBL）被配置为在擦除期间向每个相应的扇区提供高电压，并且耦合到多个扇区中的每一个扇区，以及 耦合在相应的一对扇区之间的多个读出放大器。 还提供了操作闪速存储器的方法。 一种方法包括在擦除和编程操作期间通过GBL向配对的扇区提供高电压，并且在读取操作期间通过局部位线向每个存储器件提供低电压。

公开(公告)号：US08750051B1

公开(公告)日：2014-06-10

申请号：US13340248

申请日：2011-12-29

申请人： Ryan T. Hirose ,  Bogdan Georgescu ,  Leonard Gitlan ,  Ashish Amonkar ,  Gary Moscaluk ,  John Tiede

发明人： Ryan T. Hirose ,  Bogdan Georgescu ,  Leonard Gitlan ,  Ashish Amonkar ,  Gary Moscaluk ,  John Tiede

IPC分类号： G11C16/04

CPC分类号： G11C16/14 ,  G11C16/30 ,  G11C16/3404 ,  H03K3/35613 ,  H03K19/0185

摘要： Apparatus, systems, and methods for providing high voltage to memory devices are provided. One apparatus includes a low voltage input and a two-rail level shifting. The two-rail level shifting is configured to increase the low voltage or to decrease the low voltage to an amount that is less than or equal to a ground potential based on the amount of the low voltage. A system includes a low voltage input for receiving a voltage and a two-rail level shifting coupled to the low voltage input. The two-rail level shifting is configured to increase the voltage to a positive voltage if the voltage is equal to a ground potential and decrease the voltage to a negative voltage if the voltage is greater than the ground potential. One method includes receiving a voltage, modifying the voltage to generate one of a plurality of output voltages, and providing the output voltage to a memory device.

摘要翻译： 提供了用于向存储器件提供高电压的装置，系统和方法。 一种装置包括低电压输入和双轨电平移位。 双轨电平移位被配置为基于低电压的量来增加低电压或将低电压降低到小于或等于接地电位的量。 系统包括用于接收电压的低电压输入和耦合到低电压输入的双轨电平转换。 如果电压等于接地电位，则双轨电平移位被配置为将电压增加到正电压，如果电压大于接地电位，则将电压降低到负电压。 一种方法包括接收电压，修改电压以产生多个输出电压中的一个，并将输出电压提供给存储器件。