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公开(公告)号:US20120215965A1
公开(公告)日:2012-08-23
申请号:US13372800
申请日:2012-02-14
申请人: Ryoichi Inada , Ryo Fujita , Takuma Nishimura , Koji Matsuda
发明人: Ryoichi Inada , Ryo Fujita , Takuma Nishimura , Koji Matsuda
CPC分类号: G06F12/0246 , G06F12/1027 , G06F2212/7201
摘要: A nonvolatile memory stores therein a plurality of partitioned translation tables which are created by partitioning a logical-to-physical address translation table in a page unit. A RAM stores therein a logical-to-physical address translation table cache for storing at least the one or more partitioned translation tables, a translation-table management table for managing the partitioned translation tables, and a cache management table for managing the logical-to-physical address translation table cache. The translation-table management table includes a cache presence-or-absence flag and a cache entry number, the cache presence-or-absence flag being used for indicating that the partitioned translation tables are stored into the logical-to-physical address translation table cache, the cache entry number being used for indicating storage destinations of the partitioned translation tables in the logical-to-physical address translation table cache. Reading/writing processings of information in the logical-to-physical address translation table between the nonvolatile memory and the RAM are performed in the page unit.
摘要翻译: 非易失性存储器中存储有通过在页面单元中划分逻辑到物理地址转换表而创建的多个分区转换表。 RAM中存储有至少存储一个或多个分区转换表的逻辑到物理地址转换表缓存,用于管理分区转换表的转换表管理表,以及用于管理逻辑到 物理地址转换表缓存。 翻译表管理表包括高速缓存存在或不存在标志和高速缓存条目号,高速缓存存在或不存在标志用于指示分区转换表被存储到逻辑到物理地址转换表中 高速缓存,用于指示逻辑到物理地址转换表缓存中的分区转换表的存储目的地的高速缓存条目号。 在页面单元中执行在非易失性存储器和RAM之间的逻辑到物理地址转换表中的信息的读/写处理。
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公开(公告)号:US20120246399A1
公开(公告)日:2012-09-27
申请号:US13512958
申请日:2010-12-01
申请人: Masataka Nishi , Ryo Fujita , Ryoichi Inada , Takuma Nishimura , Masahiro Shiraishi , Koji Matsuda
发明人: Masataka Nishi , Ryo Fujita , Ryoichi Inada , Takuma Nishimura , Masahiro Shiraishi , Koji Matsuda
IPC分类号: G06F12/02
CPC分类号: G06F12/0246 , G06F2212/7203
摘要: Disclosed is a storage device using non-volatile semiconductor memory that achieves high performance and long life for the device. When managing the non-volatile semiconductor memory (2), physical blocks are classified into three types: scratch blocks (22), data blocks (23), and erased blocks (24). Data writing from a host device (3) is performed on the scratch blocks. When the number of empty pages within a scratch block becomes less than a predetermined number or no longer exists, the block is treated thereafter as a data block, and one of the erased blocks is newly assigned as a scratch block. If there are insufficient erased blocks, a block with relatively less valid data is selected from among the data blocks. After copying all valid data included in the block to a scratch block, the block is erased, and thus an erased block is acquired.
摘要翻译: 公开了一种使用非易失性半导体存储器的存储装置,其实现了该装置的高性能和长寿命。 当管理非易失性半导体存储器(2)时,物理块被分为三种类型:暂存块(22),数据块(23)和擦除块(24)。 在暂存块上执行来自主机(3)的数据写入。 当暂存块内的空页数少于预定数量或不再存在时,该块被当作数据块处理,并且其中一个擦除块被新分配为暂存块。 如果擦除块不足,则从数据块中选择具有相对较少有效数据的块。 将块中包含的所有有效数据复制到暂存块后,块被擦除,从而获取被擦除的块。
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公开(公告)号:US08949515B2
公开(公告)日:2015-02-03
申请号:US13512958
申请日:2010-12-01
申请人: Masataka Nishi , Ryo Fujita , Ryoichi Inada , Takuma Nishimura , Masahiro Shiraishi , Koji Matsuda
发明人: Masataka Nishi , Ryo Fujita , Ryoichi Inada , Takuma Nishimura , Masahiro Shiraishi , Koji Matsuda
IPC分类号: G06F12/02
CPC分类号: G06F12/0246 , G06F2212/7203
摘要: Disclosed is a storage device using non-volatile semiconductor memory that achieves high performance and long life for the device. When managing the non-volatile semiconductor memory (2), physical blocks are classified into three types: scratch blocks (22), data blocks (23), and erased blocks (24). Data writing from a host device (3) is performed on the scratch blocks. When the number of empty pages within a scratch block becomes less than a predetermined number or no longer exists, the block is treated thereafter as a data block, and one of the erased blocks is newly assigned as a scratch block. If there are insufficient erased blocks, a block with relatively less valid data is selected from among the data blocks. After copying all valid data included in the block to a scratch block, the block is erased, and thus an erased block is acquired.
摘要翻译: 公开了一种使用非易失性半导体存储器的存储装置,其实现了该装置的高性能和长寿命。 当管理非易失性半导体存储器(2)时,物理块被分为三种类型:暂存块(22),数据块(23)和擦除块(24)。 在暂存块上执行来自主机(3)的数据写入。 当暂存块内的空页数少于预定数量或不再存在时,该块被当作数据块处理,并且其中一个擦除块被新分配为暂存块。 如果擦除块不足,则从数据块中选择具有相对较少有效数据的块。 将块中包含的所有有效数据复制到暂存块后,块被擦除,从而获取被擦除的块。
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公开(公告)号:US06772869B2
公开(公告)日:2004-08-10
申请号:US10235677
申请日:2002-09-06
IPC分类号: F16H6106
CPC分类号: F16D25/14 , B60T13/66 , F16D48/02 , F16D48/066 , F16D2048/0209 , F16H61/0251 , F16H2061/0253 , F16H2061/062
摘要: A fluid pressure control valve apparatus for a clutch or a brake which is small in size and capable of reducing occurrence of malfunction of a pressure control valve caused by dust caught therein is provided. For this purpose, a fluid pressure control valve apparatus (2) for controlling a pressure of a fluid and feeding it to a clutch or a brake includes a pressure control valve (30) for controlling fluid pressure, an electromagnetic proportional pilot operated valve (50) for issuing an operation command for the pressure control valve with pilot pressure according to a command current to a proportional solenoid (40), and a flow detecting valve (10) for detecting a flow of the fluid to be fed to the clutch or the brake from the pressure control valve to detect completion of filling in the clutch or the brake.
摘要翻译: 提供一种用于离合器或制动器的流体压力控制阀装置,该离合器或制动器的尺寸小并且能够减少由于其中被捕获的灰尘引起的压力控制阀的故障的发生。 为此,用于控制流体的压力并将其输送到离合器或制动器的流体压力控制阀装置(2)包括用于控制流体压力的压力控制阀(30),电磁比例先导操作阀(50 ),用于根据对比例螺线管(40)的指令电流向先导压力发出用于压力控制阀的操作命令;以及流量检测阀(10),用于检测要供给到离合器或 从压力控制阀制动以检测离合器或制动器中的填充。
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