公开(公告)号：US20190326534A1

公开(公告)日：2019-10-24

申请号：US16467540

申请日：2017-12-07

Applicant: SABIC GLOBAL TECHNOLOGIES B.V.

Inventor： Kahee SHIN ,  Sun Young LEE ,  Jeongmin LIM ,  Chunim LEE ,  Jong Woo LEE ,  Soonyoung HYUN

IPC: H01L51/50 ,  H01L33/06 ,  H01L33/26 ,  H01L33/56 ,  H01L31/0352 ,  H01L33/50 ,  H05B33/20 ,  C09K11/88 ,  C09K11/02

Abstract: An article including a first layer and a second layer; a quantum dot layer disposed between the first layer and the second layer; and wherein the quantum dot layer includes at least one quantum dot having an alloyed core, wherein the alloyed core includes a group III-V semiconductor alloyed with a group II-VI cadmium free compound, and wherein the core and shell emit in a bandwidth less than 50 nanometers.