A METHOD OF CHEMICAL VAPOR INFILTRATION OR DEPOSITION

    公开(公告)号:US20190389774A1

    公开(公告)日:2019-12-26

    申请号:US16313824

    申请日:2017-06-27

    Abstract: A method of chemical vapor infiltration or deposition includes forming silicon carbide in pores of a porous substrate or on a surface of a substrate, the substrate being placed in a reaction enclosure, the silicon carbide being formed from a gas phase introduced into the reaction enclosure, the gas phase including a reagent compound that is a precursor of silicon carbide and that has the following formula in which n is an integer equal to 0 or 1; m is an integer lying in the range 1 to 3; p is an integer lying in the range 0 to 2 with m+p=3; and R designates —H or —CH3; a ratio C/Si between the number of carbon atoms and the number of silicon atoms in the introduced gas phase lying in the range 2 to 3.

    SHAPING EQUIPMENT AND FACILITY FOR GAS-PHASE CHEMICAL INFILTRATION OF FIBROUS PREFORMS

    公开(公告)号:US20200061868A1

    公开(公告)日:2020-02-27

    申请号:US16467299

    申请日:2017-12-04

    Abstract: A shaping tooling for chemical vapor infiltration of a fiber preform includes a structural enclosure formed by supports each provided with a multiply-perforated zone. Each of the supports has in its inside face an uncased zone that includes the multiply-perforated zone. The shaping tooling further includes first and second shaping mold functional elements, each present in a respective one of the uncased zones of the support. Each shaping mold functional element has a first face of a determined shape corresponding to the shape of the part that is to be made and a second face that is held facing the inside face of a support. Each functional element has a plurality of perforations and presents a number of perforations, a size of perforations, or a shape of perforations that differs from the number, the size, or the shape of the perforations present in the facing support.

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