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    METHOD FOR DENSIFICATION BY CHEMICAL VAPOUR INFILTRATION
    1.
    发明公开
    METHOD FOR DENSIFICATION BY CHEMICAL VAPOUR INFILTRATION 审中-公开

    公开(公告)号：US20240327299A1

    公开(公告)日：2024-10-03

    申请号：US18708915

    申请日：2022-11-09

    Applicant: SAFRAN CERAMICS

    Inventor： Franck LAMOUROUX ,  Adrien DELCAMP

    IPC: C04B35/622 ,  C04B41/45

    CPC classification number: C04B35/62281 ,  C04B41/457 ,  C04B41/4584 ,  C04B2235/614 ,  C04B2235/6581

    Abstract: A method for densification by Chemical Vapor Infiltration of a plurality of fibrous preforms arranged in the enclosure of a densification furnace, the method including at least the following procedures a) and b), each being repeated more than once: a) introducing a first gaseous phase, the thermal decomposition of which allows the matrix to form in the pores of the plurality of fibrous preforms; b) introducing a second gaseous phase while simultaneously placing the enclosure of the furnace under vacuum, such that the introduction of the second gaseous phase takes place at the same time as the expulsion of the first gaseous phase out of the enclosure, the temperature of the second gaseous phase being less than or equal to 25° C. when it is introduced into the enclosure of the furnace.

    A METHOD OF CHEMICAL VAPOR INFILTRATION OR DEPOSITION
    2.
    发明申请
    A METHOD OF CHEMICAL VAPOR INFILTRATION OR DEPOSITION 审中-公开

    公开(公告)号：US20190389774A1

    公开(公告)日：2019-12-26

    申请号：US16313824

    申请日：2017-06-27

    Applicant: SAFRAN CERAMICS

    Inventor： Stéphane GOUJARD ,  Adrien DELCAMP ,  Cédric DESCAMPS

    IPC: C04B35/571 ,  C04B35/628 ,  C04B35/80 ,  C23C16/04 ,  C23C16/32

    Abstract: A method of chemical vapor infiltration or deposition includes forming silicon carbide in pores of a porous substrate or on a surface of a substrate, the substrate being placed in a reaction enclosure, the silicon carbide being formed from a gas phase introduced into the reaction enclosure, the gas phase including a reagent compound that is a precursor of silicon carbide and that has the following formula in which n is an integer equal to 0 or 1; m is an integer lying in the range 1 to 3; p is an integer lying in the range 0 to 2 with m+p=3; and R designates —H or —CH3; a ratio C/Si between the number of carbon atoms and the number of silicon atoms in the introduced gas phase lying in the range 2 to 3.

    A DEVICE FOR COATING ONE OR MORE YARNS BY A VAPOR DEPOSITION METHOD
    3.
    发明申请
    A DEVICE FOR COATING ONE OR MORE YARNS BY A VAPOR DEPOSITION METHOD 审中-公开

    公开(公告)号：US20180347048A1

    公开(公告)日：2018-12-06

    申请号：US15777492

    申请日：2016-11-17

    Applicant: SAFRAN CERAMICS

    Inventor： Emilien BUET ,  Simon THIBAUD ,  Adrien DELCAMP ,  Cédric DESCAMPS

    IPC: C23C16/54 ,  C23C16/44 ,  C23C16/455 ,  D06B3/04 ,  D06M11/73 ,  C23C16/26 ,  C23C16/32

    Abstract: A device for coating one or more yarns by a vapor deposition method, the device including a treatment chamber defining a first and a second treatment zone in which at least one yarn is to be coated by performing a vapor deposition method, the first and second zones being separated by a wall and the first zone surrounding the second zone, or being superposed on the second zone; a conveyor system to transport the at least one yarn through the first and second zones; a first injector device to inject a first treatment gas phase into the first zone and a first removal device configured to remove the residual first gas phase from the first zone; and a second injector device configured to inject a second treatment gas phase into the second zone, and a second removal device configured to remove the residual second gas phase from the second zone.

    CONSOLIDATION METHOD USING GAS PHASE INFILTRATION
    5.
    发明公开
    CONSOLIDATION METHOD USING GAS PHASE INFILTRATION 审中-公开

    公开(公告)号：US20230399268A1

    公开(公告)日：2023-12-14

    申请号：US17799739

    申请日：2021-02-10

    Applicant: SAFRAN CERAMICS

    Inventor： Stéphane Roger André GOUJARD ,  Adrien DELCAMP ,  Cédric DESCAMPS ,  Thierry Guy Xavier TESSON ,  Charles LELEU

    IPC: C04B41/45 ,  B28B11/08

    CPC classification number: C04B41/457 ,  C04B41/4529 ,  B28B11/08 ,  C04B2235/614

    Abstract: A method of consolidation includes placing a fibrous preform in the shaping recess of a shaping tool, and supplying the shaping tool with a gas phase to obtain a deposit in the fibrous preform, the shaping tool for the vapor phase chemical infiltration including first and second portions, having respectively first and second shaping zones surrounded by a first and second edge zones, the first and the second shaping zone defining a shaping recess to receive the fibrous preform. A gas injection port is present at least partially in the first or second edge zone and a gas outlet port is present at least partially in the first or second edge zone, the gas injection port and the gas outlet port placing the shaping recess in fluid communication with the outside of the shaping tool. Outer faces of the first and second portion are impermeable to gas.

    DEVICE FOR COATING ONE OR MORE YARNS BY A VAPOR DEPOSITION METHOD
    8.
    发明申请
    DEVICE FOR COATING ONE OR MORE YARNS BY A VAPOR DEPOSITION METHOD 审中-公开

    公开(公告)号：US20180347106A1

    公开(公告)日：2018-12-06

    申请号：US15777538

    申请日：2016-11-18

    Applicant: SAFRAN CERAMICS

    Inventor： Emilien BUET ,  Simon THIBAUD ,  Adrien DELCAMP ,  Cédric DESCAMPS

    IPC: D06M11/58 ,  D06B3/04 ,  C23C16/44 ,  C23C16/54 ,  C23C16/455 ,  C23C16/34

    CPC classification number: C23C16/545 ,  C23C16/4412 ,  C23C16/45502 ,  D06B3/045 ,  D06M11/58 ,  D06M2101/40

    Abstract: A device for coating one or more yarns by a vapor deposition method, the device including a treatment chamber extending along a longitudinal axis and having a treatment zone between an internal and an external circumferential wall, and within which at least one yarn is to be coated by performing a vapor deposition method; a conveyor system to transport the at least one yarn through the treatment zone; an injector device to inject a treatment gas phase into the treatment zone through an inlet orifice present in the internal or external circumferential wall; and a removal device to remove the residual gas phase from the treatment zone through an outlet orifice present in the internal or external circumferential wall, the inlet and the outlet orifice being situated in a common plane perpendicular to the longitudinal axis of the chamber and being offset around the circumferential direction of the chamber.

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