公开(公告)号：US20240170450A1

公开(公告)日：2024-05-23

申请号：US18283972

申请日：2022-03-28

申请人： SAFRAN ELECTRONICS & DEFENSE

发明人： Jean-Christophe RIOU ,  Corinne PONS ,  Alain JAUSSENT

IPC分类号： H01L23/00 ,  H01L25/065

CPC分类号： H01L24/83 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L25/0655 ,  H01L2224/29139 ,  H01L2224/33181 ,  H01L2224/75272 ,  H01L2224/7555 ,  H01L2224/7592 ,  H01L2224/83093 ,  H01L2224/83097 ,  H01L2224/83203 ,  H01L2224/83908

摘要： The method comprises the following successive steps: — depositing sintering material (26) onto one of an electronic component (28) and a substrate (30); — heating the material (26) so as to bring a temperature of the material to a preliminary exothermic peak, which precedes an exothermic sintering peak, without the temperature of the material reaching a maximum of the preliminary exothermic peak; — fastening the other of the component (28) and the substrate (30) to the material (26) so that the material is interposed between the component and the substrate; and— pressing the material (26) while hot so as to cause it to creep.