公开(公告)号：US20170341344A1

公开(公告)日：2017-11-30

申请号：US15534842

申请日：2015-12-08

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Michel ROUBY ,  Pierre CHAUSSADE ,  Gregoire MATHEY ,  Catherine DESCUSSE

IPC: B32B17/10

CPC classification number: B32B17/10018 ,  B32B17/10743 ,  B32B17/10761 ,  B32B17/1077 ,  B32B17/10788 ,  B32B2333/12 ,  B32B2369/00

Abstract: A glazing includes a transparent polymer material sheet having a thickness of from 5 to 25 mm and a glass sheet having a thickness of between 0.5 and 1.5 mm, which are bonded to one another by an adhesive interlayer, the hardness of which at a temperature at least equal to −5° C. is at most equal to 70 Shore A and the thickness of which is a decreasing function of the thickness of the glass sheet, an adhesive interlayer thickness of 2.5 mm being sufficient for a glass sheet thickness of 0.55 mm and an adhesive interlayer thickness of 1.25 mm being sufficient for a glass sheet thickness of 1.25 mm.

公开(公告)号：US20190309409A1

公开(公告)日：2019-10-10

申请号：US16309184

申请日：2017-06-22

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Bernard NGHIEM ,  Yohan FAUCILLON ,  Gregoire MATHEY ,  Thierry KAUFFMANN

IPC: C23C14/18 ,  G06T7/00 ,  C23C14/54 ,  G01N21/88 ,  G02B1/10

Abstract: A method for locating, in a deposition line including a succession of compartments, an origin of a defect affecting a stack of thin layers deposited on a substrate in the compartments, in which each thin layer is deposited in one or more successive compartments of the deposition line and pieces of debris remaining on the surface of a thin layer deposited in a compartment act as masks for the subsequent depositions of thin layers and are the origin of defects, includes obtaining at least one image showing the defect, determining, from the at least one image, a signature of the defect, the signature containing at least one characteristic representative of the defect, and identifying at least one compartment of the deposition line liable to be the origin of the defect from the signature of the defect and using reference signatures associated with the compartments of the deposition line.