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公开(公告)号:US20140332795A1
公开(公告)日:2014-11-13
申请号:US14367688
申请日:2012-12-27
Applicant: SAINT-GOBAIN GLASS FRANCE
Inventor: Denis Guimard , Julien Booz , Augustin Palacios-Laloy
CPC classification number: H01L51/5215 , C03C17/36 , C03C17/3626 , C03C17/3639 , C03C17/3644 , C03C17/3652 , C03C17/3671 , C03C2217/948 , H01L51/0021
Abstract: A transparent electrode for an organic light-emitting diode including, on a transparent support made of mineral glass, n individual stacks of thin layers, each individual stack successively including, starting from the glass support, (a) a layer of mixed tin zinc oxide, (b) a crystalline layer of zinc oxide, optionally doped with aluminum, (c) a metallic silver layer, in contact with the zinc oxide layer, and positioned between each silver layer and the mixed tin zinc oxide layer or layers closest thereto is (d) a layer made of silicon nitride or made of silica, optionally doped with a metal. There is also provided It also relates to an an organic light-emitting diode device containing such an electrode and to a process for manufacturing such a device.
Abstract translation: 一种用于有机发光二极管的透明电极,包括在由矿物玻璃制成的透明支撑体上的n个单层薄层,每个单独的叠层从玻璃支撑体开始依次包括(a)一层混合的锡锌氧化物 ,(b)任选地掺杂有铝的氧化锌结晶层,(c)与氧化锌层接触并且位于每个银层与最接近的混合锡氧化锌层之间的金属银层是 (d)由氮化硅制成的或由二氧化硅制成的层,任选地掺杂有金属。 还提供了它还涉及一种含有这种电极的有机发光二极管装置及其制造方法。
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2.
公开(公告)号:US09786849B2
公开(公告)日:2017-10-10
申请号:US15326909
申请日:2015-07-09
Applicant: SAINT-GOBAIN GLASS FRANCE
Inventor: Denis Guimard , Julien Booz
CPC classification number: H01L51/0096 , H01L51/0023 , H01L51/5203 , H01L51/5212 , H01L51/5228 , H01L51/5262 , H01L51/5268
Abstract: An electrically conductive OLED carrier includes a glazing substrate; an electrode arranged in a metal grid made up of strands; an insulating light extraction layer under the metal grid; and a layer partially structured in its thickness, this layer being of given composition and of refractive index n3 of 1.7 to 2.3, and being located on the light extraction layer, which partially structured layer is formed from a region structured with cavities containing the metal grid, and from another region, called the low region, located on the light extraction layer, the separation H between that surface of the structured region called the high surface, and that surface of the metal grid called the upper surface, and therefore that furthest from the substrate, is larger than 100 nm. The strands have along their length a central zone between lateral zones that are flush with the high surface.
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