LOW-EMISSIVITY MATERIAL COMPRISING A SILICON NITRIDE- OR OXYNITRIDE-BASED LAYER AND A ZINC TIN OXIDE-BASED LAYER

    公开(公告)号:US20230174418A1

    公开(公告)日:2023-06-08

    申请号:US17924089

    申请日:2021-05-07

    Abstract: A material includes a substrate coated with a stack including at least one silver-based functional metal layer and at least two dielectric coatings, each dielectric coating including at least one dielectric layer, so that each functional metal layer is between two dielectric coatings, wherein the dielectric coating located in contact with the substrate includes a layer including silicon selected from silicon oxynitride or nitride-based layers located in contact with the substrate; a layer based on zinc oxide and tin including at least 20% by mass of tin relative to the total mass of zinc and tin located in contact with the layer including silicon, the sum of thicknesses of all oxide-based layers present in the dielectric coating located between the substrate and the first functional metal layer and/or in each dielectric coating located above the first functional layer is greater than 50% of the total thickness of the dielectric coating.

Patent Agency Ranking