公开(公告)号：US09825066B2

公开(公告)日：2017-11-21

申请号：US14990383

申请日：2016-01-07

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Myung-Kwan Ryu ,  Eok-Su Kim ,  Kyoung Seok Son ,  Seung-Ha Choi ,  Sho-Yeon Kim ,  Hyun Kim ,  Eun-Hye Park ,  Byung-Hwan Chu

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/41733 ,  H01L29/78696

Abstract: A thin film transistor substrate includes a gate electrode, a channel layer overlapping the gate electrode, a source electrode overlapping the channel layer, a drain electrode overlapping the channel layer and the source electrode, and a spacer disposed between the source electrode and the drain electrode.

公开(公告)号：US20160211281A1

公开(公告)日：2016-07-21

申请号：US14990383

申请日：2016-01-07

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Myung-Kwan Ryu ,  Eok-Su Kim ,  Kyoung Seok Son ,  Seung-Ha Choi ,  Sho-Yeon Kim ,  Hyun Kim ,  Eun-Hye Park ,  Byung-Hwan Chu

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/41733 ,  H01L29/78696

Abstract: A thin film transistor substrate includes a gate electrode, a channel layer overlapping the gate electrode, a source electrode overlapping the channel layer, a drain electrode overlapping the channel layer and the source electrode, and a spacer disposed between the source electrode and the drain electrode.

Abstract translation: 薄膜晶体管基板包括栅电极，与栅电极重叠的沟道层，与沟道层重叠的源极，与沟道层重叠的漏电极和源极，以及设置在源电极和漏极之间的间隔物 。