摘要:
A TFT substrate includes a first active pattern, a first gate insulation, and a first gate. A second gate is on a second gate insulation covering the first gate. A source connection electrode contacts a source region of the first active pattern. A drain connection electrode contacts its drain region. A second active pattern is on a first insulation covering the second gate. A third gate insulation covers the second active pattern. A third gate is disposed on the third gate insulation. A second insulation interlayer covers the third gate. A first source, a first drain, a second source, and a second drain are disposed on the second insulation interlayer. The first source and the first drain contact the source connection electrode and the drain connection electrode. The second source and the second drain contact a source region and a drain region of the second active pattern.
摘要:
A thin film transistor substrate includes pixels disposed in a display area and connected to gate lines and data lines crossing the gate lines, a gate driver disposed in a non-display area adjacent to the display area and connected to the gate lines, signal pad parts disposed in the non-display area and connected to the gate driver and the data lines, test pad parts disposed in a cutting area adjacent to the non-display area and connected to the signal pad parts, static electricity dispersion parts disposed in the cutting area and connected to the plurality of test pad parts, and a guard line disposed in the cutting area and connected to the static electricity dispersion parts. The static electricity dispersion parts disperse a static electricity inflowing from the signal pad parts and the plurality of test pad parts to the guard line.