Thin film transistor, thin film transistor panel, and method for manufacturing the same
    1.
    发明授权
    Thin film transistor, thin film transistor panel, and method for manufacturing the same 有权
    薄膜晶体管,薄膜晶体管面板及其制造方法

    公开(公告)号:US09117917B2

    公开(公告)日:2015-08-25

    申请号:US13650528

    申请日:2012-10-12

    IPC分类号: H01L27/15 H01L29/786

    摘要: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.

    摘要翻译: 薄膜晶体管(TFT)包括衬底,在衬底上设置有在半导体层上彼此间隔开的第一源电极和第一漏电极的半导体层,设置在第一源极之间的半导体层中的沟道区 所述第一漏电极,设置在所述沟道区上的防蚀层,所述第一源电极和所述第一漏电极以及与所述第一源极接触的第二源电极,以及与所述第一漏极接触的第二漏极 电极。

    THIN FILM TRANSISTOR, THIN FILM TRANSISTOR PANEL, AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    THIN FILM TRANSISTOR, THIN FILM TRANSISTOR PANEL, AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    薄膜晶体管,薄膜晶体管板及其制造方法

    公开(公告)号:US20150287836A1

    公开(公告)日:2015-10-08

    申请号:US14743387

    申请日:2015-06-18

    摘要: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.

    摘要翻译: 薄膜晶体管(TFT)包括衬底,在衬底上设置有在半导体层上彼此间隔开的第一源电极和第一漏电极的半导体层,设置在第一源极之间的半导体层中的沟道区 所述第一漏电极,设置在所述沟道区上的防蚀层,所述第一源电极和所述第一漏电极以及与所述第一源极接触的第二源电极,以及与所述第一漏极接触的第二漏极 电极。

    Display panel and method of manufacturing the same

    公开(公告)号:US10796972B2

    公开(公告)日:2020-10-06

    申请号:US15964544

    申请日:2018-04-27

    IPC分类号: H01L21/66 H01L27/12 G09G3/00

    摘要: A display panel includes first and second test lines connected to the each of data lines, extending in the second direction, and arranged in the first direction, a first test pad electrically connected to the first test line, the first test pad and the first test line being formed from a same layer, and a second test pad electrically connected to the second test line through a contact hole formed through a first insulation layer and disposed adjacent to the first test pad in the second direction.