公开(公告)号：US09117917B2

公开(公告)日：2015-08-25

申请号：US13650528

申请日：2012-10-12

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun-Jung Lee ,  Sung-Haeng Cho ,  Woo-Geun Lee ,  Jang-Hoon Ha ,  Hee-Jun Byeon ,  Ji-Yun Hong ,  Ji-Soo Oh

IPC: H01L27/15 ,  H01L29/786

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.

Abstract translation: 薄膜晶体管（TFT）包括衬底，在衬底上设置有在半导体层上彼此间隔开的第一源电极和第一漏电极的半导体层，设置在第一源极之间的半导体层中的沟道区 所述第一漏电极，设置在所述沟道区上的防蚀层，所述第一源电极和所述第一漏电极以及与所述第一源极接触的第二源电极，以及与所述第一漏极接触的第二漏极 电极。

公开(公告)号：US20150287836A1

公开(公告)日：2015-10-08

申请号：US14743387

申请日：2015-06-18

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun-Jung Lee ,  Sung-Haeng Cho ,  Woo-Geun Lee ,  Jang-Hoon Ha ,  Hee-Jun Byeon ,  Ji-Yun Hong ,  Ji-Soo Oh

IPC: H01L29/786 ,  H01L29/417 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.

Abstract translation: 薄膜晶体管（TFT）包括衬底，在衬底上设置有在半导体层上彼此间隔开的第一源电极和第一漏电极的半导体层，设置在第一源极之间的半导体层中的沟道区 所述第一漏电极，设置在所述沟道区上的防蚀层，所述第一源电极和所述第一漏电极以及与所述第一源极接触的第二源电极，以及与所述第一漏极接触的第二漏极 电极。

公开(公告)号：US09647136B2

公开(公告)日：2017-05-09

申请号：US14743387

申请日：2015-06-18

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun-Jung Lee ,  Sung-Haeng Cho ,  Woo-Geun Lee ,  Jang-Hoon Ha ,  Hee-Jun Byeon ,  Ji-Yun Hong ,  Ji-Soo Oh

IPC: H01L29/786 ,  H01L27/15 ,  H01L33/08 ,  H01L27/12 ,  H01L29/417

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.