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1.发明申请OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING OXIDE SEMICONDUCTOR DEVICES, DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES 有权氧化物半导体器件，制造氧化物半导体器件的方法，具有氧化物半导体器件的显示器件，制造具有氧化物半导体器件的显示器件的方法公开(公告)号：US20150132871A1
公开(公告)日：2015-05-14
申请号：US14533009
申请日：2014-11-04
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Seong-Min Wang , Ki-Wan Ahn , Joo-Sun Yoon , Ki-Hong Kim
IPC: H01L27/12 , H01L21/44 , H01L21/467 , H01L21/477 , H01L29/786 , H01L29/66
CPC classification number: H01L27/1259 , H01L21/0206 , H01L21/32136 , H01L21/44 , H01L21/467 , H01L21/477 , H01L27/1225 , H01L29/42384 , H01L29/4908 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H01L2227/323
Abstract: An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.
Abstract translation: 氧化物半导体器件包括：衬底上的栅极电极，衬底上的栅极绝缘层，栅极绝缘层上的凹槽结构，栅极绝缘层的第一部分上的源电极， 栅极绝缘层的第二部分和源电极和漏电极上的有源图案，填充凹陷结构的有源图案。
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2.发明授权Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices 有权氧化物半导体器件，氧化物半导体器件的制造方法，具有氧化物半导体器件的显示器件，制造具有氧化物半导体器件的显示器件的方法公开(公告)号：US09159749B2
公开(公告)日：2015-10-13
申请号：US14533009
申请日：2014-11-04
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Seong-Min Wang , Ki-Wan Ahn , Joo-Sun Yoon , Ki-Hong Kim
IPC: H01L29/786 , H01L21/336 , H01L27/12 , H01L29/66 , H01L21/467 , H01L21/477 , H01L21/44 , H01L29/49 , H01L21/02 , H01L21/3213
CPC classification number: H01L27/1259 , H01L21/0206 , H01L21/32136 , H01L21/44 , H01L21/467 , H01L21/477 , H01L27/1225 , H01L29/42384 , H01L29/4908 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H01L2227/323
Abstract: An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.
Abstract translation: 氧化物半导体器件包括：衬底上的栅极电极，衬底上的栅极绝缘层，栅极绝缘层上的凹槽结构，栅极绝缘层的第一部分上的源电极， 栅极绝缘层的第二部分和源电极和漏电极上的有源图案，填充凹陷结构的有源图案。
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