-
公开(公告)号：US20150364530A1
公开(公告)日：2015-12-17
申请号：US14526277
申请日：2014-10-28
发明人： Joo-Sun Yoon , Ki-Wan Ahn
CPC分类号： H01L27/3276 , H01L27/326
摘要： An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate and a plurality of pixels formed over the substrate. Each of the pixels comprises a first region configured to emit light and a second region configured to pass external light therethrough. The second regions of at least three adjacent ones of the pixels have different areas.
摘要翻译： 公开了一种有机发光二极管（OLED）显示器。 一方面，显示器包括衬底和形成在衬底上的多个像素。 每个像素包括被配置为发光的第一区域和被配置为使外部光通过其中的第二区域。 至少三个相邻像素中的第二区域具有不同的区域。
-
公开(公告)号：US10553661B2
公开(公告)日：2020-02-04
申请号：US15713983
申请日：2017-09-25
发明人： Sung-Eun Lee , Jin-Taek Kim , Ki-Wan Ahn , Joo-Sun Yoon , Yong-Jae Jang , Kwang-Young Choi
IPC分类号： H01L27/32 , G09G3/3233 , G09G3/3291 , H01L27/12
摘要： A display substrate includes a data line extending in a first direction, a first transistor including a first channel area overlapping the data line and a first control electrode which overlaps the first channel area and has a substantially same shape as that of the first channel area in an overlap area in which the first control electrode overlaps the first channel area, a scan line extending in a second direction crossing the first direction, a first voltage line extending in the first direction and transfers a first driving signal, a first capacitor including an extension electrode which overlaps the first control electrode and extends in the second direction from the first voltage line and a second capacitor including an overlap electrode overlapping the data line.
-
公开(公告)号：US09899632B2
公开(公告)日：2018-02-20
申请号：US14818714
申请日：2015-08-05
发明人： Ki-Wan Ahn , Yong-Jae Jang
CPC分类号： H01L51/5281 , H01L27/3258 , H01L27/326 , H01L27/3267 , H01L27/3272 , H01L51/524 , H01L51/5253 , H01L2227/323
摘要： A display panel includes a substrate, light emitting structures disposed on an upper surface of the substrate in pixel regions, an encapsulation substrate disposed over the light emitting structures, and a light blocking member disposed on a lower surface of the substrate. The light blocking member has blocking portions corresponding to the pixel regions and openings corresponding to transparent regions.
-
4.发明授权公开(公告)号：US09525016B2
公开(公告)日：2016-12-20
申请号：US14560441
申请日：2014-12-04
发明人： Ki-Wan Ahn , Sang-Ho Park , Yong-Jae Jang
IPC分类号： H01L27/32
CPC分类号： H01L27/3272 , H01L27/3246 , H01L27/326
摘要： An organic light emitting display device includes a substrate including a plurality of pixel regions and a plurality of transparent regions, thin film transistors disposed in the pixel regions, an insulation layer disposed on the thin film transistors, first electrodes electrically contacting the thin film transistors, a pixel defining layer including a black material disposed on the first electrodes, organic light emitting structures disposed on the pixel defining layer, and a second electrode disposed on the organic light emitting structures. The pixel defining layer may define an asymmetrical configuration of adjacent transparent regions disposed on opposing sides of corresponding pixel regions.
摘要翻译： 一种有机发光显示装置，包括：包括多个像素区域和多个透明区域的基板;设置在所述像素区域中的薄膜晶体管，设置在所述薄膜晶体管上的绝缘层，与所述薄膜晶体管电接触的第一电极， 包括设置在第一电极上的黑色材料的像素限定层，设置在像素限定层上的有机发光结构以及设置在有机发光结构上的第二电极。 像素限定层可以限定布置在对应像素区域的相对侧上的相邻透明区域的不对称配置。
-
5.发明授权Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices 有权氧化物半导体器件，氧化物半导体器件的制造方法，具有氧化物半导体器件的显示器件，制造具有氧化物半导体器件的显示器件的方法公开(公告)号：US09159749B2
公开(公告)日：2015-10-13
申请号：US14533009
申请日：2014-11-04
发明人： Seong-Min Wang , Ki-Wan Ahn , Joo-Sun Yoon , Ki-Hong Kim
IPC分类号： H01L29/786 , H01L21/336 , H01L27/12 , H01L29/66 , H01L21/467 , H01L21/477 , H01L21/44 , H01L29/49 , H01L21/02 , H01L21/3213
CPC分类号： H01L27/1259 , H01L21/0206 , H01L21/32136 , H01L21/44 , H01L21/467 , H01L21/477 , H01L27/1225 , H01L29/42384 , H01L29/4908 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H01L2227/323
摘要： An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.
摘要翻译： 氧化物半导体器件包括：衬底上的栅极电极，衬底上的栅极绝缘层，栅极绝缘层上的凹槽结构，栅极绝缘层的第一部分上的源电极， 栅极绝缘层的第二部分和源电极和漏电极上的有源图案，填充凹陷结构的有源图案。
-
公开(公告)号：US10347869B2
公开(公告)日：2019-07-09
申请号：US15264473
申请日：2016-09-13
发明人： Ki-Wan Ahn , Jae-Hyuck Jang
摘要： A method of manufacturing an organic light-emitting display device is provided. The method includes forming a pixel electrode, forming a hydrophobic material layer on the pixel electrode, wherein the hydrophobic material layer includes a hydrophobic material, forming a pixel-defining layer by patterning the hydrophobic material layer, so as to expose at least a portion of the pixel electrode, and removing the hydrophobic material on the exposed portion of the pixel electrode using surface treatment.
-
公开(公告)号：US09923042B2
公开(公告)日：2018-03-20
申请号：US14526277
申请日：2014-10-28
发明人： Joo-Sun Yoon , Ki-Wan Ahn
IPC分类号： H01L27/32
CPC分类号： H01L27/3276 , H01L27/326
摘要： An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate and a plurality of pixels formed over the substrate. Each of the pixels comprises a first region configured to emit light and a second region configured to pass external light therethrough. The second regions of at least three adjacent ones of the pixels have different areas.
-
8.发明授权公开(公告)号：US09450211B2
公开(公告)日：2016-09-20
申请号：US14049893
申请日：2013-10-09
发明人： Ki-Wan Ahn , Jae-Hyuck Jang
CPC分类号： H01L51/5259 , H01L27/32 , H01L27/3246 , H01L27/3283 , H01L51/0018 , H01L51/5203 , H01L51/56
摘要： A method of manufacturing an organic light-emitting display device is provided. The method includes forming a pixel electrode, forming a hydrophobic material layer on the pixel electrode, wherein the hydrophobic material layer includes a hydrophobic material, forming a pixel-defining layer by patterning the hydrophobic material layer, so as to expose at least a portion of the pixel electrode, and removing the hydrophobic material on the exposed portion of the pixel electrode using surface treatment.
摘要翻译： 提供一种制造有机发光显示装置的方法。 该方法包括形成像素电极，在像素电极上形成疏水材料层，其中疏水材料层包括疏水材料，通过图案化疏水材料层形成像素限定层，以使至少一部分 使用表面处理除去像素电极的露出部分上的疏水性材料。
-
9.发明授权TFT, method of manufacturing the TFT, and method of manufacturing organic light emitting display device including the TFT 有权TFT，TFT的制造方法以及包括TFT的有机发光显示装置的制造方法公开(公告)号：US09202896B2
公开(公告)日：2015-12-01
申请号：US13960341
申请日：2013-08-06
发明人： Joo-Sun Yoon , Ki-Wan Ahn , Joung-Keun Park
IPC分类号： H01L29/66 , H01L29/786 , H01L51/56 , H01L27/32
CPC分类号： H01L29/66969 , H01L27/3262 , H01L29/78621 , H01L29/7869 , H01L29/78693
摘要： A method of manufacturing a thin film transistor (TFT), including forming an oxide semiconductor pattern including a first region, a second region and a third region on a substrate, directly plasma processing the first region and the second region of the oxide semiconductor pattern, forming an insulating layer on the substrate to cover the oxide semiconductor pattern, forming a gate electrode on the insulating layer to overlap the third region, and forming a source electrode and a drain electrode that are insulated from the gate electrode and that contact the first region, the second region being disposed between the first region and the third region.
摘要翻译： 一种制造薄膜晶体管（TFT）的方法，包括在衬底上形成包括第一区域，第二区域和第三区域的氧化物半导体图案，直接等离子体处理氧化物半导体图案的第一区域和第二区域， 在所述基板上形成绝缘层以覆盖所述氧化物半导体图案，在所述绝缘层上形成与所述第三区域重叠的栅电极，以及形成与所述栅电极绝缘并与所述第一区域接触的源电极和漏电极 所述第二区域设置在所述第一区域和所述第三区域之间。
-
10.发明申请OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING OXIDE SEMICONDUCTOR DEVICES, DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES 有权氧化物半导体器件，制造氧化物半导体器件的方法，具有氧化物半导体器件的显示器件，制造具有氧化物半导体器件的显示器件的方法公开(公告)号：US20150132871A1
公开(公告)日：2015-05-14
申请号：US14533009
申请日：2014-11-04
发明人： Seong-Min Wang , Ki-Wan Ahn , Joo-Sun Yoon , Ki-Hong Kim
IPC分类号： H01L27/12 , H01L21/44 , H01L21/467 , H01L21/477 , H01L29/786 , H01L29/66
CPC分类号： H01L27/1259 , H01L21/0206 , H01L21/32136 , H01L21/44 , H01L21/467 , H01L21/477 , H01L27/1225 , H01L29/42384 , H01L29/4908 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H01L2227/323
摘要： An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.
摘要翻译： 氧化物半导体器件包括：衬底上的栅极电极，衬底上的栅极绝缘层，栅极绝缘层上的凹槽结构，栅极绝缘层的第一部分上的源电极， 栅极绝缘层的第二部分和源电极和漏电极上的有源图案，填充凹陷结构的有源图案。
-
-
-
-
-
-
-
-
-
搜索结果
19 条记录 (耗时 0.02 秒)
