公开(公告)号：US20170084634A1

公开(公告)日：2017-03-23

申请号：US15370445

申请日：2016-12-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： DONG GUN OH ,  YOUNG GU KANG ,  SUNG IN RO ,  JAE HAK LEE ,  SUNG HOON LIM ,  WOONG KI JEON

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/78648 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869

Abstract: A thin film transistor is provided as follows. A first gate electrode and a second gate electrode are stacked on each other. A semiconductor layer is interposed between the first and second gate electrodes. A source electrode and a drain electrode are interposed between the semiconductor layer and the second gate electrode. A connection electrode connects electrically the first gate electrode and the second gate electrode. A first insulating film is interposed between the first gate electrode and the semiconductor layer. A second insulating film includes a first part interposed between the semiconductor layer and the second gate electrode and a second part interposed between the second gate electrode and the drain electrode. A third insulating film includes a first part interposed between the connection electrode and the second gate electrode.