公开(公告)号：US11594639B2

公开(公告)日：2023-02-28

申请号：US17115470

申请日：2020-12-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gap Kim ,  Yu-Gwang Jeong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417 ,  H01L27/32

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20210217895A1

公开(公告)日：2021-07-15

申请号：US17115470

申请日：2020-12-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gap Kim ,  Yu-Gwang Jeong

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.