公开(公告)号：US09048326B2

公开(公告)日：2015-06-02

申请号：US13710889

申请日：2012-12-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Youngjoo Choi ,  Gwang-Bum Ko ,  GwonHeon Ryu ,  Joongeol Kim ,  Do-Hyun Kim ,  Sang-Moon Moh ,  WooGeun Lee ,  WonHee Lee

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  G02F1/1343

CPC classification number: H01L29/78693 ,  G02F1/134363 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/66969

Abstract: A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.

Abstract translation: 薄膜晶体管基板包括基板; 基板上的栅电极; 栅电极上的半导体图案; 半导体图案上的源电极; 半导体图案上的漏电极，与源电极间隔开; 连接到所述漏电极的像素电极; 以及与像素电极部分重叠的公共电极。 半导体图案与像素电极在薄膜晶体管基板的同一层中，具有与像素电极的电特性不同的电特性。