公开(公告)号：US20160240688A1

公开(公告)日：2016-08-18

申请号：US15141325

申请日：2016-04-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YUL-KYU LEE ,  Kyu-Sik Cho ,  Sun Park

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78645 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/6675 ,  H01L29/78675 ,  H01L29/78696

Abstract: A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on the semiconductor layer, a gate insulating layer disposed between the semiconductor layer and the first and second gate electrodes and having a first through hole between the first and second gate electrodes and a capping layer covering the first gate electrode and contacting the semiconductor layer via the first through hole. The capping layer includes a conductive material.

Abstract translation: 薄膜晶体管包括：衬底，设置在衬底上的半导体层，设置在半导体层上的第一栅极电极和第二栅电极，设置在半导体层与第一和第二栅电极之间的栅极绝缘层，并具有 所述第一和第二栅电极之间的第一通孔和覆盖所述第一栅电极并且经由所述第一通孔接触所述半导体层的覆盖层。 封盖层包括导电材料。

公开(公告)号：US20140346604A1

公开(公告)日：2014-11-27

申请号：US14050825

申请日：2013-10-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YUL-KYU LEE ,  KYU-SIK CHO ,  SUN PARK

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/78645 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/6675 ,  H01L29/78675 ,  H01L29/78696

Abstract: A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on the semiconductor layer, a gate insulating layer disposed between the semiconductor layer and the first and second gate electrodes and having a first through hole between the first and second gate electrodes and a capping layer covering the first gate electrode and contacting the semiconductor layer via the first through hole. The capping layer includes a conductive material.

Abstract translation: 薄膜晶体管包括：衬底，设置在衬底上的半导体层，设置在半导体层上的第一栅极电极和第二栅电极，设置在半导体层与第一和第二栅电极之间的栅极绝缘层，并具有 所述第一和第二栅电极之间的第一通孔和覆盖所述第一栅电极并且经由所述第一通孔接触所述半导体层的覆盖层。 封盖层包括导电材料。