公开(公告)号：US20170338245A1

公开(公告)日：2017-11-23

申请号：US15379602

申请日：2016-12-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： SUN PARK ,  Chungi You ,  Hyuksoon Kwon

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3248 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor including a substrate; a semiconductor layer disposed over the substrate; a gate insulting film disposed over the semiconductor layer; and a gate electrode. The semiconductor layer includes a channel region, a source region, and a drain region. The gate insulating film includes a first region and a second region. The second region borders the first region. The gate electrode is disposed over the first region. A step shape is formed where the second region meets the first region.

公开(公告)号：US20140346604A1

公开(公告)日：2014-11-27

申请号：US14050825

申请日：2013-10-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YUL-KYU LEE ,  KYU-SIK CHO ,  SUN PARK

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/78645 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/6675 ,  H01L29/78675 ,  H01L29/78696

Abstract: A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on the semiconductor layer, a gate insulating layer disposed between the semiconductor layer and the first and second gate electrodes and having a first through hole between the first and second gate electrodes and a capping layer covering the first gate electrode and contacting the semiconductor layer via the first through hole. The capping layer includes a conductive material.

Abstract translation: 薄膜晶体管包括：衬底，设置在衬底上的半导体层，设置在半导体层上的第一栅极电极和第二栅电极，设置在半导体层与第一和第二栅电极之间的栅极绝缘层，并具有 所述第一和第二栅电极之间的第一通孔和覆盖所述第一栅电极并且经由所述第一通孔接触所述半导体层的覆盖层。 封盖层包括导电材料。

公开(公告)号：US20220077194A1

公开(公告)日：2022-03-10

申请号：US17352093

申请日：2021-06-18

Applicant: Samsung Display Co., Ltd.

Inventor： SUN PARK

IPC: H01L27/12 ,  H01L27/32 ,  H01L25/16

Abstract: A display panel includes: a first gate line extending in a first direction; a second gate line extending in the first direction and spaced apart from the first gate line in a second direction crossing the first direction; a first connection line extending in the second direction; and a second connection line extending in the second direction and spaced apart from the first connection line in the first direction, wherein a distal end of the first connection line overlaps the first gate line and is electrically connected to the first gate line, and wherein a distal end of the second connection line overlaps the second gate line and is electrically connected to the second gate line.

公开(公告)号：US20190206900A1

公开(公告)日：2019-07-04

申请号：US16298270

申请日：2019-03-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： SUN PARK ,  CHUNGI YOU ,  HYUKSOON KWON

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3248 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor including a substrate; a semiconductor layer disposed over the substrate; a gate insulting film disposed over the semiconductor layer; and a gate electrode. The semiconductor layer includes a channel region, a source region, and a drain region. The gate insulating film includes a first region and a second region. The second region borders the first region. The gate electrode is disposed over the first region. A step shape is formed where the second region meets the first region.