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公开(公告)号:US10931254B2
公开(公告)日:2021-02-23
申请号:US16434473
申请日:2019-06-07
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor: Seong Jong Cheon , Hyung Jin Lee , Jeong Hae Kim
Abstract: A front end module includes a base filter configured to operate as a bandpass filter passing a pass band of an input radio frequency signal; a switch connected to the base filter, and a first notch filter and a second notch filter selectively connected to the base filter through the switch, wherein a stop band of the first notch filter and a stop band of the second notch filter overlap the pass band of the base filter in a band equal to or higher than a center frequency of the pass band of the base filter.
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公开(公告)号:US10749493B2
公开(公告)日:2020-08-18
申请号:US16276995
申请日:2019-02-15
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor: Hyung Jin Lee , Seong Jong Cheon , Jeong Hae Kim
IPC: H03H7/01
Abstract: A band pass filter includes: a first circuit unit including a first series LC resonant circuit disposed between a first terminal and a second terminal; a second circuit unit disposed between the first circuit unit and the second terminal, and including a first parallel LC resonant circuit; and a third circuit unit disposed between the first terminal and a ground, and including a second series LC resonant circuit, wherein a resonant frequency of the first circuit unit is in a pass band.
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公开(公告)号:US10784839B2
公开(公告)日:2020-09-22
申请号:US16180495
申请日:2018-11-05
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor: Jeong Hae Kim , Seong Jong Cheon , Hyung Jin Lee
Abstract: A high pass filter includes: a first resonant circuit including an inductor and a capacitor in parallel between first and second terminals; a second resonant circuit including an inductor and a capacitor in series between a first end of the first resonant circuit and a ground; a third resonant circuit including an inductor and a capacitor in series between a second end of the first resonant circuit and the ground; a fourth resonant circuit disposed between the first end of the first resonant circuit and the first terminal, and including a first acoustic resonator; and a fifth resonant circuit disposed between the second end of the first resonant circuit and the second terminal, and including a second acoustic resonator. Attenuation regions respectively formed by the first, second, and third resonant circuits are arranged in lower frequency regions than attenuation regions respectively formed by the fourth and fifth resonant circuits.
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