公开(公告)号：US20240006190A1

公开(公告)日：2024-01-04

申请号：US18117864

申请日：2023-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Jin-Hong PARK ,  Hogeun AHN ,  BoReum LEE ,  Sunguk JANG ,  Jiwan KOO ,  Seunghwan SEO

IPC: H01L21/467 ,  H01L29/66 ,  H01L21/441

CPC classification number: H01L21/467 ,  H01L29/66969 ,  H01L21/441

Abstract: A method of manufacturing a semiconductor device includes forming a channel layer on a substrate, forming a mask on the channel layer, surface-treating an exposed surface of the channel layer exposed from the mask, forming an electrode on the exposed surface of the channel layer, and removing the mask. The channel layer includes a two-dimensional material, and the surface-treating of the exposed surface of the channel layer includes surface-treating the exposed surface of the channel layer with HCl.