公开(公告)号：US20170184786A1

公开(公告)日：2017-06-29

申请号：US15388951

申请日：2016-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN-KWON BOK ,  KYOUNG-HO HA ,  DONG-JAE SHIN ,  SEONG-GU KIM ,  KWAN-SIK CHO ,  BEOM-SUK LEE ,  JUNG-HO CHA ,  HYUN-IL BYUN ,  DONG-HYUN KIM ,  YONG-HWACK SHIN ,  JUNG-HYE KIM

IPC: G02B6/122 ,  G02B6/136 ,  G02B6/125

CPC classification number: G02B6/1228 ,  G02B6/125 ,  G02B6/136 ,  G02B2006/12097

Abstract: An optical device includes a substrate; a trench in a portion of the substrate; a clad layer arranged in the trench; a first structure arranged on the clad layer to have a first depth; and a second structure arranged on the clad layer to have a second depth different from the first depth.

公开(公告)号：US20190305022A1

公开(公告)日：2019-10-03

申请号：US16428940

申请日：2019-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GWI-DEOK RYAN LEE ,  KWANG-MIN LEE ,  BEOM-SUK LEE ,  TAE-YON LEE

IPC: H01L27/146 ,  H01L27/28 ,  H01L27/30

Abstract: An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.

公开(公告)号：US20180190696A1

公开(公告)日：2018-07-05

申请号：US15653537

申请日：2017-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GWI-DEOK RYAN LEE ,  KWANG-MIN LEE ,  BEOM-SUK LEE ,  TAE-YON LEE

IPC: H01L27/146 ,  H01L27/28

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14667 ,  H01L27/14683 ,  H01L27/28 ,  H01L27/307

Abstract: An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.