公开(公告)号：US20170018623A1

公开(公告)日：2017-01-19

申请号：US14802843

申请日：2015-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG-DAE SUK ,  BOM-SOO KIM

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L29/42392 ,  H01L29/0673 ,  H01L29/513 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/785 ,  H01L29/78696

Abstract: The semiconductor device includes a first wire pattern formed on a substrate and spaced apart from the substrate, the first wire pattern extending in a first direction. A gate electrode surrounds a circumference of the first wire pattern and extends in a second direction. The second direction crosses the first direction. A gate spacer is disposed on opposite sidewalls of the gate electrode, the gate spacer including a first part and a second part. The first part includes a top portion and a bottom portion spaced apart from each other. The second part is disposed at opposite sides of the first part in the second direction. The second part directly contacts the bottom portion of the first part.

Abstract translation: 半导体器件包括形成在衬底上并与衬底间隔开的第一线图案，第一线图案沿第一方向延伸。 栅电极围绕第一线图案的圆周并沿第二方向延伸。 第二个方向穿过第一个方向。 栅极间隔物设置在栅电极的相对侧壁上，栅极间隔物包括第一部分和第二部分。 第一部分包括彼此间隔开的顶部部分和底部部分。 第二部分在第二方向上设置在第一部分的相对侧。 第二部分直接接触第一部分的底部。