公开(公告)号：US20170018623A1

公开(公告)日：2017-01-19

申请号：US14802843

申请日：2015-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG-DAE SUK ,  BOM-SOO KIM

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L29/42392 ,  H01L29/0673 ,  H01L29/513 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/785 ,  H01L29/78696

Abstract: The semiconductor device includes a first wire pattern formed on a substrate and spaced apart from the substrate, the first wire pattern extending in a first direction. A gate electrode surrounds a circumference of the first wire pattern and extends in a second direction. The second direction crosses the first direction. A gate spacer is disposed on opposite sidewalls of the gate electrode, the gate spacer including a first part and a second part. The first part includes a top portion and a bottom portion spaced apart from each other. The second part is disposed at opposite sides of the first part in the second direction. The second part directly contacts the bottom portion of the first part.

Abstract translation: 半导体器件包括形成在衬底上并与衬底间隔开的第一线图案，第一线图案沿第一方向延伸。 栅电极围绕第一线图案的圆周并沿第二方向延伸。 第二个方向穿过第一个方向。 栅极间隔物设置在栅电极的相对侧壁上，栅极间隔物包括第一部分和第二部分。 第一部分包括彼此间隔开的顶部部分和底部部分。 第二部分在第二方向上设置在第一部分的相对侧。 第二部分直接接触第一部分的底部。

公开(公告)号：US20160141392A1

公开(公告)日：2016-05-19

申请号：US15003288

申请日：2016-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： SUNGMIN KIM ,  SUNG-DAE SUK ,  JAEHOO PARK ,  DONGHO CHA ,  DAEWON HA

IPC: H01L29/66 ,  H01L21/308 ,  H01L21/762 ,  H01L29/06

CPC classification number: H01L29/66795 ,  H01L21/02233 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/845 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/6656

Abstract: A method of manufacturing a semiconductor device includes patterning a substrate to form an active fin, forming a sacrificial gate pattern crossing over the active fin on the substrate, forming an interlayer insulating layer on the sacrificial gate pattern, removing the sacrificial gate pattern to form a gap region exposing the active fin in the interlayer insulating layer, and oxidizing a portion of the active fin exposed by the gap region to form an insulation pattern between the active fin and the substrate.

Abstract translation: 制造半导体器件的方法包括：图案化衬底以形成有源鳍片，形成与衬底上的有源鳍片交叉的牺牲栅极图案，在牺牲栅极图案上形成层间绝缘层，去除牺牲栅极图案以形成 间隙区域使层间绝缘层中的活性鳍片曝光，并且氧化由间隙区域暴露的活性鳍片的一部分，以在活性鳍片和衬底之间形成绝缘图案。

公开(公告)号：US20170162651A1

公开(公告)日：2017-06-08

申请号：US14961213

申请日：2015-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG-DAE SUK ,  Bom-Soo Kim ,  Kang-Ill Seo

IPC: H01L29/06 ,  H01L27/12 ,  H01L29/51 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/0673 ,  H01L27/1211 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/511 ,  H01L29/66439 ,  H01L29/785

Abstract: A semiconductor device includes a wire pattern spaced apart from a substrate and extended in a first direction, a gate electrode disposed around a circumference of the wire pattern and extended in a second direction that is different from the first direction, a source disposed on a first side of the gate electrode, a drain disposed on a second side of the gate electrode, the source and the drain connected to the wire pattern and a gate spacer disposed on first and second sidewalls of the gate electrode, on the source and on the drain.

公开(公告)号：US20170162577A1

公开(公告)日：2017-06-08

申请号：US15440541

申请日：2017-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG-DAE SUK ,  KANG-ILL SEO

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8238 ,  H01L21/84

CPC classification number: H01L27/0924 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823864 ,  H01L21/845 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/78618 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

Abstract: A semiconductor device is provided. A substrate includes a first region and a second region. A first wire pattern, extending in a first direction, is formed at a first height from the substrate of the first region. A second wire pattern, extending in a second direction, is formed at a second height from the substrate of the second region. The first height is different from the second height. A first gate electrode, surrounding the first wire pattern, extends in a third direction crossing the first direction. A second gate electrode, surrounding the second wire pattern, extends in a fourth direction crossing the second direction. A first gate insulation layer is formed along a circumference of the first wire pattern and a sidewall of the first gate electrode. A second gate insulation layer is formed along a circumference of the second wire pattern and a sidewall of the second gate electrode.

公开(公告)号：US20170018610A1

公开(公告)日：2017-01-19

申请号：US15196209

申请日：2016-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG-DAE SUK ,  KANG-ILL SEO

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/08 ,  H01L29/165 ,  H01L29/06

CPC classification number: H01L29/1054 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/78696

Abstract: Provided is a semiconductor device. The semiconductor device includes a fin disposed on a substrate along a first direction. A sacrificial layer is disposed on the fin. An active layer is disposed on the sacrificial layer. A gate insulating layer and a gate electrode are disposed along a second direction intersecting the first direction. The gate insulating layer covers substantially entire top, side and bottom surfaces of the active layer. A source or drain region is disposed on at least one side of the gate electrode on the substrate. A first concentration of germanium in a first region and a second region of the active layer is higher than a second concentration of germanium in a third region disposed between the first region and the second region.

Abstract translation: 提供一种半导体器件。 半导体器件包括沿第一方向设置在衬底上的翅片。 牺牲层设置在翅片上。 有源层设置在牺牲层上。 沿着与第一方向相交的第二方向设置栅极绝缘层和栅电极。 栅极绝缘层覆盖有源层的大致整个顶部，侧面和底部表面。 源极或漏极区域设置在衬底上的栅电极的至少一侧上。 在第一区域和第二区域中的第一区域和第二区域中的锗的第一浓度高于设置在第一区域和第二区域之间的第三区域中的第二浓度的锗。

公开(公告)号：US20160365440A1

公开(公告)日：2016-12-15

申请号：US15172851

申请日：2016-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG-DAE SUK ,  SUNHOM STEVE PAAK ,  YEON-HO PARK ,  DONG-HO CHA

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/4236 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7856 ,  H01L29/78603 ,  H01L29/78696 ,  H01L2029/7858

Abstract: Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.

Abstract translation: 提供半导体器件。 半导体器件包括沟道。 半导体器件包括具有第一和第二部分的栅极结构。 通道位于栅极结构的第一和第二部分之间。 接触结构邻近通道侧表面的一部分。 还提供了形成半导体器件的相关方法。