公开(公告)号：US20250079265A1

公开(公告)日：2025-03-06

申请号：US18457311

申请日：2023-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Cheol NA ,  Kyoung Woo Le ,  Min Chan Gwak ,  Guk Hee Kim ,  Beom Jin Kim ,  Young Woo Kim ,  Anthony Dongick Lee ,  Myeong Gyoon Chae

IPC: H01L23/48 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device includes a substrate that includes a first surface and a second surface, a first source/drain pattern disposed on the first surface of the substrate, a second source/drain pattern disposed on the first surface of the, a first source/drain contact disposed on the first source/drain pattern and connected to the first source/drain pattern, a second source/drain contact disposed on the second source/drain pattern and connected to the second source/drain pattern, a rear wiring line disposed on the second surface of the substrate, a first contact connection via that connects the rear wiring line with the first source/drain contact, a second contact connection via that connects the rear wiring line with the second source/drain contact and is spaced apart from the first contact connection via, and an air gap structure disposed between the first contact connection via and the second contact connection via.