公开(公告)号：US10109747B2

公开(公告)日：2018-10-23

申请号：US14831449

申请日：2015-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byong-Hyun Jang ,  Juhyung Kim ,  Woonkyung Lee ,  Jaegoo Lee ,  Chaeho Kim ,  Junkyu Yang ,  Phil Ouk Nam ,  Jaeyoung Ahn ,  Kihyun Hwang

IPC: H01L29/792 ,  H01L29/66 ,  H01L29/423 ,  H01L29/04 ,  H01L29/10 ,  H01L23/528 ,  H01L29/51 ,  H01L27/11582 ,  H01L27/1157

Abstract: A semiconductor memory device and a method of fabricating the same. The device includes a plurality of gates vertically stacked on a top surface of a substrate with an epitaxial layer formed in the substrate, a vertical channel vertically penetrating the gates to be electrically connected to the epitaxial layer, and a memory layer provided between the vertical channel and the gates. The epitaxial layer has a top surface positioned at a level between a bottom surface of the lowermost one of the gates and the top surface of the substrate.