公开(公告)号：US11171287B2

公开(公告)日：2021-11-09

申请号：US16365874

申请日：2019-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Uk Kim ,  Young-Min Ko ,  Byong-Ju Kim ,  Kwang-Min Park ,  Jeong-Hee Park ,  Dong-Sung Choi

IPC: H01L45/00 ,  H01L27/24

Abstract: A variable resistance memory device may include a memory unit including a first electrode disposed on a substrate, a variable resistance pattern disposed on the first electrode and a second electrode disposed on the variable resistance pattern, a selection pattern disposed on the memory unit, and a capping structure covering a sidewall of the selection pattern. The capping structure may include a first capping pattern and a second capping pattern sequentially stacked on at least one sidewall of the selection pattern. The first capping pattern may be silicon pattern, and the second capping pattern may include a nitride.